RB

Richard A. Blanchard

NW Nthdegree Technologies Worldwide: 57 patents #3 of 49Top 7%
GS General Semiconductor: 38 patents #3 of 38Top 8%
SS Stmicroelectronics Sa: 35 patents #23 of 1,676Top 2%
SI Siliconix Incorporated: 35 patents #3 of 125Top 3%
IP Ideal Power: 35 patents #2 of 18Top 15%
MS Maxpower Semiconductor: 30 patents #3 of 13Top 25%
PT Pakal Technologies: 29 patents #1 of 7Top 15%
Apple: 12 patents #2,703 of 18,612Top 15%
JL Jbcr Innovations, Llp: 6 patents #1 of 3Top 35%
SU Supertex: 5 patents #8 of 39Top 25%
FS Fairchild Semiconductor: 5 patents #127 of 715Top 20%
SS Sgs-Thomson Microelectronics S.A.: 4 patents #193 of 957Top 25%
MT Mears Technologies: 4 patents #10 of 14Top 75%
TS Third Dimension (3D) Semiconductor: 4 patents #3 of 7Top 45%
VS Vishay General Semiconductor: 3 patents #23 of 56Top 45%
PS Philips Semiconductors: 2 patents #8 of 64Top 15%
TC Tyco Electronics Co.: 2 patents #481 of 1,364Top 40%
UN Unknown: 2 patents #12,644 of 83,584Top 20%
NS National Semiconductor: 2 patents #867 of 2,238Top 40%
NA Nasa: 1 patents #11 of 27Top 45%
IX Ixys: 1 patents #35 of 60Top 60%
BO Bourns: 1 patents #63 of 147Top 45%
PP Printed Energy Pty: 1 patents #11 of 15Top 75%
RM Rj Mears: 1 patents #9 of 12Top 75%
NA National Aeronautics And Space Administration: 1 patents #15 of 161Top 10%
VT Vlsi Technology: 1 patents #349 of 594Top 60%
SN Stmicroelectronics International N.V.: 1 patents #83 of 160Top 55%
Infineon Technologies Ag: 1 patents #168 of 446Top 40%
📍 Los Altos Hills, CA: #5 of 812 inventorsTop 1%
🗺 California: #185 of 386,348 inventorsTop 1%
Overall (All Time): #1,026 of 4,157,543Top 1%
329
Patents All Time

Issued Patents All Time

Showing 201–225 of 329 patents

Patent #TitleCo-InventorsDate
7091552 High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and ion implantation 2006-08-15
7084455 Power semiconductor device having a voltage sustaining region that includes terraced trench with continuous doped columns formed in an epitaxial layer 2006-08-01
7067376 High voltage power MOSFET having low on-resistance 2006-06-27
7061072 Integrated circuit inductors using driven shields Michael Callahan 2006-06-13
7023069 Method for forming thick dielectric regions using etched trenches 2006-04-04
7019360 High voltage power mosfet having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source Fwu-Iuan Hshieh 2006-03-28
7015104 Technique for forming the deep doped columns in superjunction 2006-03-21
6992350 High voltage power MOSFET having low on-resistance 2006-01-31
6949432 Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface 2005-09-27
6921938 Double diffused field effect transistor having reduced on-resistance 2005-07-26
6906529 Capacitive sensor device with electrically configurable pixels 2005-06-14
6882573 DMOS device with a programmable threshold voltage 2005-04-19
6861337 Method for using a surface geometry for a MOS-gated device in the manufacture of dice having different sizes 2005-03-01
6812056 Technique for fabricating MEMS devices having diaphragms of “floating” regions of single crystal material 2004-11-02
6812526 Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface 2004-11-02
6794251 Method of making a power semiconductor device 2004-09-21
6790745 Fabrication of dielectrically isolated regions of silicon in a substrate 2004-09-14
6777745 Symmetric trench MOSFET device and method of making same Fwu-Iuan Hshieh, Koon Chong So 2004-08-17
6750523 Photodiode stacks for photovoltaic relays and the method of manufacturing the same 2004-06-15
6750104 High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source Fwu-Iuan Hshieh 2004-06-15
6734495 Two terminal programmable MOS-gated current source 2004-05-11
6730963 Minimum sized cellular MOS-gated device geometry 2004-05-04
6724039 Semiconductor device having a Schottky diode 2004-04-20
6724044 MOSFET device having geometry that permits frequent body contact 2004-04-20
6713351 Double diffused field effect transistor having reduced on-resistance 2004-03-30