RB

Richard A. Blanchard

NW Nthdegree Technologies Worldwide: 57 patents #3 of 49Top 7%
GS General Semiconductor: 38 patents #3 of 38Top 8%
SS Stmicroelectronics Sa: 35 patents #23 of 1,676Top 2%
SI Siliconix Incorporated: 35 patents #3 of 125Top 3%
IP Ideal Power: 35 patents #2 of 18Top 15%
MS Maxpower Semiconductor: 30 patents #3 of 13Top 25%
PT Pakal Technologies: 29 patents #1 of 7Top 15%
Apple: 12 patents #2,703 of 18,612Top 15%
JL Jbcr Innovations, Llp: 6 patents #1 of 3Top 35%
SU Supertex: 5 patents #8 of 39Top 25%
FS Fairchild Semiconductor: 5 patents #127 of 715Top 20%
SS Sgs-Thomson Microelectronics S.A.: 4 patents #193 of 957Top 25%
MT Mears Technologies: 4 patents #10 of 14Top 75%
TS Third Dimension (3D) Semiconductor: 4 patents #3 of 7Top 45%
VS Vishay General Semiconductor: 3 patents #23 of 56Top 45%
PS Philips Semiconductors: 2 patents #8 of 64Top 15%
TC Tyco Electronics Co.: 2 patents #481 of 1,364Top 40%
UN Unknown: 2 patents #12,644 of 83,584Top 20%
NS National Semiconductor: 2 patents #867 of 2,238Top 40%
NA Nasa: 1 patents #11 of 27Top 45%
IX Ixys: 1 patents #35 of 60Top 60%
BO Bourns: 1 patents #63 of 147Top 45%
PP Printed Energy Pty: 1 patents #11 of 15Top 75%
RM Rj Mears: 1 patents #9 of 12Top 75%
NA National Aeronautics And Space Administration: 1 patents #15 of 161Top 10%
VT Vlsi Technology: 1 patents #349 of 594Top 60%
SN Stmicroelectronics International N.V.: 1 patents #83 of 160Top 55%
Infineon Technologies Ag: 1 patents #168 of 446Top 40%
📍 Los Altos Hills, CA: #5 of 812 inventorsTop 1%
🗺 California: #185 of 386,348 inventorsTop 1%
Overall (All Time): #1,026 of 4,157,543Top 1%
329
Patents All Time

Issued Patents All Time

Showing 226–250 of 329 patents

Patent #TitleCo-InventorsDate
6710400 Method for fabricating a high voltage power MOSFET having a voltage sustaining region that includes doped columns formed by rapid diffusion 2004-03-23
6710414 Surface geometry for a MOS-gated device that allows the manufacture of dice having different sizes 2004-03-23
6689662 Method of forming a high voltage power MOSFET having low on-resistance 2004-02-10
6686244 Power semiconductor device having a voltage sustaining region that includes doped columns formed with a single ion implantation step 2004-02-03
6660571 High voltage power MOSFET having low on-resistance 2003-12-09
6656797 High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and ion implantation 2003-12-02
6649477 Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands Jean-Michel Guillot 2003-11-18
6627949 High voltage power MOSFET having low on-resistance 2003-09-30
6624494 Method for fabricating a power semiconductor device having a floating island voltage sustaining layer Jean-Michel Guillot 2003-09-23
6621107 Trench DMOS transistor with embedded trench schottky rectifier Fwu-Iuan Hshieh, Koon Chong So 2003-09-16
6593619 High voltage power MOSFET having low on-resistance 2003-07-15
6593174 Field effect transistor having dielectrically isolated sources and drains and method for making same 2003-07-15
6576516 High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysilicon 2003-06-10
6566201 Method for fabricating a high voltage power MOSFET having a voltage sustaining region that includes doped columns formed by rapid diffusion 2003-05-20
6538279 High-side switch with depletion-mode device 2003-03-25
6492663 Universal source geometry for MOS-gated power devices 2002-12-10
6479352 Method of fabricating high voltage power MOSFET having low on-resistance 2002-11-12
6472709 Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface 2002-10-29
6468866 Single feature size MOS technology power device Ferruccio Frisina, Angelo Magri, Giuseppe Ferla 2002-10-22
6465304 Method for fabricating a power semiconductor device having a floating island voltage sustaining layer Jean-Michel Guillot 2002-10-15
6432775 Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface 2002-08-13
6420764 Field effect transitor having dielectrically isolated sources and drains and methods for making same 2002-07-16
6403427 Field effect transistor having dielectrically isolated sources and drains and method for making same 2002-06-11
6399961 Field effect transistor having dielectrically isolated sources and drains and method for making same 2002-06-04
6368918 Method of fabricating Nan embedded flash EEPROM with a tunnel oxide grown on a textured substrate James A. Cunningham 2002-04-09