YM

Yoshihisa Matsubara

NE Nec: 33 patents #202 of 14,502Top 2%
RE Renesas Electronics: 17 patents #139 of 4,529Top 4%
NE Nec Electronics: 14 patents #25 of 1,789Top 2%
RT Renesas Technology: 1 patents #1,991 of 3,337Top 60%
Yamaha Motor: 1 patents #1,283 of 2,310Top 60%
📍 Ibaraki, JP: #43 of 6,779 inventorsTop 1%
Overall (All Time): #32,994 of 4,157,543Top 1%
66
Patents All Time

Issued Patents All Time

Showing 26–50 of 66 patents

Patent #TitleCo-InventorsDate
7332753 Semiconductor device, wafer and method of designing and manufacturing the same Hiromasa Kobayashi 2008-02-19
7148575 Semiconductor device having bonding pad above low-k dielectric film 2006-12-12
7052994 Method for manufacturing semiconductor device, and processing system and semiconductor device Toshiyuki Takewaki, Manabu Iguchi 2006-05-30
6936926 Wiring structure in a semiconductor device Norio Okada 2005-08-30
6890852 Semiconductor device and manufacturing method of the same 2005-05-10
6861759 Semiconductor apparatus of which reliability of interconnections is improved and manufacturing method of the same Masahiro Komuro, Manabu Iguchi, Takahiro Onodera, Norio Okada 2005-03-01
6607978 Method of making a semiconductor device with alloy film between barrier metal and interconnect 2003-08-19
6573607 Semiconductor device and manufacturing method thereof Nobukazu Ito 2003-06-03
6555911 Semiconductor device and method of manufacturing interconnections thereof using copper and tungsten in predetermined ratios Toshiyuki Takewaki, Manabu Iguchi 2003-04-29
6514853 Semiconductor device and a manufacturing process therefor 2003-02-04
6492735 Semiconductor device with alloy film between barrier metal and interconnect 2002-12-10
6458690 Method for manufacturing a multilayer interconnection structure Toshiyuki Takewaki, Manabu Iguchi 2002-10-01
6379782 Semiconductor device formed with metal wiring on a wafer by chemical mechanical polishing, and method of manufacturing the same Manabu Iguchi, Toshiyuki Takewaki 2002-04-30
6372628 Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film, and a method for manufacturing the semiconductor device Ko Noguchi, Shinya Ito, Noriaki Oda, Akira Matsumoto, Takashi Ishigami +5 more 2002-04-16
6329295 Semiconductor device capable of having amorphous carbon fluoride film of low dielectric constant as interlayer insulation material and method of manufacturing the same Kazuhiko Endo 2001-12-11
6309970 Method of forming multi-level copper interconnect with formation of copper oxide on exposed copper surface Nobukazu Ito 2001-10-30
6297094 Semiconductor device with salicide structure and fabrication method thereof Masato Kawata 2001-10-02
6277735 Method for forming a refractory metal silicide layer 2001-08-21
6274417 Method of forming a semiconductor device 2001-08-14
6271594 Semiconductor device and method of manufacturing the same 2001-08-07
6268090 Process for manufacturing semiconductor device and exposure mask Kazumi Sugai, Nobukazu Ito, Kazuyoshi Ueno 2001-07-31
6241859 Method of forming a self-aligned refractory metal silicide layer Yoshiaki Yamada, Takashi Ishigami 2001-06-05
6149730 Apparatus for forming films of a semiconductor device, a method of manufacturing a semiconductor device, and a method of forming thin films of a semiconductor Manabu Iguchi, Kazuhiko Endo 2000-11-21
6127267 Fabrication method of semiconductor device equipped with silicide layer Takashi Ishigami, Yoshiaki Yamada, Shinichi Watanuki 2000-10-03
6104092 Semiconductor device having amorphous carbon fluoride film of low dielectric constant as interlayer insulation material Kazuhiko Endo 2000-08-15