Issued Patents All Time
Showing 51–66 of 66 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6096638 | Method for forming a refractory metal silicide layer | — | 2000-08-01 |
| 6091081 | Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film | Ko Noguchi, Shinya Ito, Noriaki Oda, Akira Matsumoto, Takashi Ishigami +5 more | 2000-07-18 |
| 6048760 | Method of forming a self-aligned refractory metal silicide contact using doped field oxide regions | — | 2000-04-11 |
| 6040240 | Method for forming interconnection structure | — | 2000-03-21 |
| 6037250 | Process for forming multilevel interconnection structure | — | 2000-03-14 |
| 6037625 | Semiconductor device with salicide structure and fabrication method thereof | Masato Kawata | 2000-03-14 |
| 5963829 | Method of forming silicide film | — | 1999-10-05 |
| 5953632 | Method for manufacturing semiconductor device comprising a silicide film | — | 1999-09-14 |
| 5918036 | Simulation method of silicide reaction for use with production of semiconductor devices | — | 1999-06-29 |
| 5897365 | Process of fabricating semiconductor device having low-resistive titanium silicide layer free from short-circuit and leakage current | — | 1999-04-27 |
| 5883003 | Method for producing a semiconductor device comprising a refractory metal silicide layer | — | 1999-03-16 |
| 5877085 | Method of manufacturing semiconductor device | — | 1999-03-02 |
| 5587590 | Test piece for X-ray inspection | — | 1996-12-24 |
| 5580826 | Process for forming a planarized interlayer insulating film in a semiconductor device using a periodic resist pattern | Shinya Ito | 1996-12-03 |
| 5569618 | Method for planarizing insulating film | — | 1996-10-29 |
| 5563100 | Fabrication method of semiconductor device with refractory metal silicide formation by removing native oxide in hydrogen | — | 1996-10-08 |