TT

Toshiyuki Takewaki

NE Nec Electronics: 25 patents #8 of 1,789Top 1%
RE Renesas Electronics: 20 patents #100 of 4,529Top 3%
NE Nec: 3 patents #4,195 of 14,502Top 30%
KT Kabushiki Kaisha Toshiba: 2 patents #9,982 of 21,451Top 50%
Toshiba Memory: 1 patents #1,210 of 1,971Top 65%
UN Unknown: 1 patents #29,356 of 83,584Top 40%
📍 Yokkaichi, JP: #45 of 2,072 inventorsTop 3%
Overall (All Time): #51,082 of 4,157,543Top 2%
52
Patents All Time

Issued Patents All Time

Showing 26–50 of 52 patents

Patent #TitleCo-InventorsDate
7745937 Semiconductor device and method of manufacturing the same Tatsuya Usami, Koichi Ohto 2010-06-29
7741214 Method of forming a semiconductor device featuring copper wiring layers of different widths having metal capping layers of different thicknesses formed thereon Kazuyoshi Ueno 2010-06-22
7737555 Semiconductor method having silicon-diffused metal wiring layer Koichi Ohto, Tatsuya Usami, Nobuyuki Yamanishi 2010-06-15
7728432 Narrow and wide copper interconnections composed of (111), (200) and (511) surfaces Hiroyuki Kunishima 2010-06-01
7692265 Fuse and seal ring Noriaki Oda 2010-04-06
7687917 Single damascene structure semiconductor device having silicon-diffused metal wiring layer Koichi Ohto, Tatsuya Usami, Nobuyuki Yamanishi 2010-03-30
7674704 Method of manufacturing a semiconductor device having an interconnect structure that increases in impurity concentration as width increases 2010-03-09
7633138 Semiconductor device and method of manufacturing the same Takeshi Toda 2009-12-15
7601640 Method of manfacturing semiconductor device Manabu Iguchi, Daisuke Oshida, Hironori Toyoshima, Masayuki Hiroi, Takuji Onuma +6 more 2009-10-13
7521802 Semiconductor device having a refractory metal containing film and method for manufacturing the same Mari Watanabe 2009-04-21
7514352 Method of manufacturing a semiconductor device having an interconnect structure that increases in impurity concentration as width increases 2009-04-07
7508082 Semiconductor device and method of manufacturing the same Noriaki Oda 2009-03-24
7479700 Semiconductor device featuring copper wiring layers of different widths having metal capping layers of different thickness formed thereon, and method for manufacturing the same Kazuyoshi Ueno 2009-01-20
7476611 Semiconductor device and manufacturing method thereof Hiroyuki Kunishima 2009-01-13
7358609 Semiconductor device Manabu Iguchi 2008-04-15
7327031 Semiconductor device and method of manufacturing the same Noriaki Oda 2008-02-05
7312535 Semiconductor device having an anti-oxidizing layer that inhibits corrosion of an interconnect layer Noriaki Oda, Yorinobu Kunimune 2007-12-25
7274104 Semiconductor device having an interconnect that increases in impurity concentration as width increases 2007-09-25
7229921 Semiconductor device and manufacturing method for the same Nobuo Hironaga, Hiroyuki Kunishima, Yoshiaki Yamamoto 2007-06-12
7052994 Method for manufacturing semiconductor device, and processing system and semiconductor device Yoshihisa Matsubara, Manabu Iguchi 2006-05-30
6949832 Semiconductor device including dissimilar element-diffused metal layer and manufacturing method thereof Hiroyuki Kunishima 2005-09-27
6890864 Semiconductor device fabricating method and treating liquid Hidemitsu Aoki, Kenichi Nakabeppu, Hiroaki Tomimori, Nobuo Hironaga, Hiroyuki Kunishima 2005-05-10
6555911 Semiconductor device and method of manufacturing interconnections thereof using copper and tungsten in predetermined ratios Yoshihisa Matsubara, Manabu Iguchi 2003-04-29
6458690 Method for manufacturing a multilayer interconnection structure Yoshihisa Matsubara, Manabu Iguchi 2002-10-01
6391774 Fabrication process of semiconductor device 2002-05-21