Issued Patents All Time
Showing 126–150 of 178 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6232201 | Semiconductor substrate processing method | Yoshiko Yoshida, Hideki Naruoka, Yasuhiro Kimura, Toshiaki Iwamatsu, Yuuichi Hirano | 2001-05-15 |
| 6225663 | Semiconductor device having SOI structure and method of fabricating the same | Shigenobu Maeda, Iljong Kim | 2001-05-01 |
| 6222710 | Semiconductor device | — | 2001-04-24 |
| 6198134 | Semiconductor device having a common substrate bias | Yasuo Inoue, Tadashi Nishimura, Toshiaki Iwamatsu | 2001-03-06 |
| 6191450 | Semiconductor device with field shield electrode | Shigenobu Maeda, Toshiaki Iwamatsu, Shigeto Maegawa, Takashi Ipposhi, Yuichi Hirano | 2001-02-20 |
| 6190967 | Semiconductor device and manufacturing method thereof | Shigenobu Maeda, Shigeto Maegawa | 2001-02-20 |
| 6150696 | Semiconductor substrate and method of fabricating semiconductor device | Toshiaki Iwamatsu, Takashi Ipposhi, Shigenobu Maeda, Yuichi Hirano | 2000-11-21 |
| 6144072 | Semiconductor device formed on insulating layer and method of manufacturing the same | Toshiaki Iwamatsu, Shigenobu Maeda, Shoichi Miyamoto, Akihiko Furukawa, Yasuo Inoue | 2000-11-07 |
| 6127209 | Semiconductor device and method of manufacturing the same | Shigenobu Maeda, Hirotada Kuriyama, Shigeto Maegawa | 2000-10-03 |
| 6124619 | Semiconductor device including upper, lower and side oxidation-resistant films | Shigenobu Maeda, Shigeto Maegawa, Takashi Ipposhi, Toshiaki Iwamatsu | 2000-09-26 |
| 6118154 | Input/output protection circuit having an SOI structure | Hirotoshi Sato, Yasuo Inoue, Toshiaki Iwamatsu | 2000-09-12 |
| 6051494 | Semiconductor device having metal silicide film | Toshiaki Iwamatsu, Yasuo Inoue, Tadashi Nishimura | 2000-04-18 |
| 6049120 | Thermal-stress-resistant semiconductor sensor | Hiroshi Otani, Masanori Tomioka | 2000-04-11 |
| 6025629 | Element isolation structure of a semiconductor device to suppress reduction in threshold voltage of parasitic MOS transistor | Takashi Ipposhi, Toshiaki Iwamatsu | 2000-02-15 |
| 5994735 | Semiconductor device having a vertical surround gate metal-oxide semiconductor field effect transistor, and manufacturing method thereof | Shigenobu Maeda, Hirotada Kuriyama, Shigeto Maegawa | 1999-11-30 |
| 5990591 | Permanent magnet type synchronous motor | Masahiro Hasebe, Satoru Wakuta | 1999-11-23 |
| 5974880 | Capacitance acceleration sensor | Hiroshi Otani | 1999-11-02 |
| 5936322 | Permanent magnet type synchronous motor | Masahiro Hasebe | 1999-08-10 |
| 5926703 | LDD device having a high concentration region under the channel | Hans-Oliver Joachim, Yasuo Inoue | 1999-07-20 |
| 5905286 | Semiconductor device | Toshiaki Iwamatsu, Shigenobu Maeda, Shoichi Miyamoto, Akihiko Furukawa, Yasuo Inoue | 1999-05-18 |
| 5891265 | SOI substrate having monocrystal silicon layer on insulating film | Tetsuya Nakai, Hiroshi Shinyashiki, Tadashi Nishimura | 1999-04-06 |
| 5889342 | Motor cooling circuit | Masahiro Hasebe | 1999-03-30 |
| 5886440 | Electric motor with plural rotor portions having pole members of different widths | Masahiro Hasebe | 1999-03-23 |
| 5864063 | Electrostatic capacity-type acceleration sensor | Hiroshi Otani | 1999-01-26 |
| 5861650 | Semiconductor device comprising an FPGA | Shigenobu Maeda, Shigeto Maegawa | 1999-01-19 |