Issued Patents All Time
Showing 101–125 of 178 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6563172 | Semiconductor substrate processing method | Yoshiko Yoshida, Hideki Naruoka, Yasuhiro Kimura, Toshiaki Iwamatsu, Yuuichi Hirano | 2003-05-13 |
| 6545602 | Fire alarm system | Makoto Sakihara, Kouichi Hishino, Takahiro Oki, Munehiro Onji | 2003-04-08 |
| 6514786 | Method of manufacturing acceleration sensor | Teruya Fukaura, Kunihiro Nakamura | 2003-02-04 |
| 6509211 | Semiconductor device having SOI structure and method of fabricating the same | Shigenobu Maeda, Iijong Kim | 2003-01-21 |
| 6509583 | Semiconductor device formed on insulating layer and method of manufacturing the same | Toshiaki Iwamatsu, Shigenobu Maeda, Shoichi Miyamoto, Akihiko Furukawa, Yasuo Inoue | 2003-01-21 |
| 6507103 | Semiconductor device | Kunihiro Nakamura | 2003-01-14 |
| 6465292 | Method of manufacturing a semiconductor device having reduced power consumption without a reduction in the source/drain breakdown voltage | Shigenobu Maeda, Toshiaki Iwamatsu | 2002-10-15 |
| 6452249 | Inductor with patterned ground shield | Shigenobu Maeda, Yuuichi Hirano, Takashi Ipposhi, Takuji Matsumoto | 2002-09-17 |
| 6441448 | Semiconductor storage device | Shigenobu Maeda, Hirotada Kuriyama | 2002-08-27 |
| 6441450 | Acceleration sensor and method of manufacturing the same | Kunihiro Nakamura, Shiro Yamasaki, Teruya Fukaura | 2002-08-27 |
| 6436792 | Method of manufacturing semiconductor device | Shigenobu Maeda, Yuuichi Hirano | 2002-08-20 |
| 6424010 | Method of manufacturing a semiconductor device having reduced power consumption without a reduction in the source/drain breakdown voltage | Shigenobu Maeda, Toshiaki Iwamatsu | 2002-07-23 |
| 6420751 | Semiconductor device and method of manufacturing the same | Shigenobu Maeda, Hirotada Kuriyama, Shigeto Maegawa | 2002-07-16 |
| 6399460 | Semiconductor device | Hidekazu Yamamoto | 2002-06-04 |
| 6373668 | Semiconductor device | — | 2002-04-16 |
| 6358783 | Semiconductor device and method of manufacturing the same | Tadashi Nishimura | 2002-03-19 |
| 6351014 | Semiconductor device having different field oxide sizes | Yasuo Inoue, Tadashi Nishimura, Toshiaki Iwamatsu | 2002-02-26 |
| 6340829 | Semiconductor device and method for manufacturing the same | Yuuichi Hirano, Shigeto Maegawa | 2002-01-22 |
| 6335267 | Semiconductor substrate and method of fabricating semiconductor device | Toshiaki Iwamatsu, Takashi Ipposhi, Shigenobu Maeda, Yuichi Hirano | 2002-01-01 |
| 6319805 | Semiconductor device having metal silicide film and manufacturing method thereof | Toshiaki Iwamatsu, Yasuo Inoue, Tadashi Nishimura | 2001-11-20 |
| 6310377 | Semiconductor device having an SOI structure | Shigenobu Maeda, Il Jung Kim, Yasuo Inoue, Shigeto Maegawa, Takashi Ipposhi | 2001-10-30 |
| 6274908 | Semiconductor device having input-output protection circuit | Takashi Ippooshi | 2001-08-14 |
| 6271541 | Semiconductor device with high gettering capability to impurity present in semiconductor layer of SOI substrate | Hidekazu Yamamoto | 2001-08-07 |
| 6249026 | MOS Transistor with a buried oxide film containing fluorine | Takuji Matsumoto, Takashi Ipposhi | 2001-06-19 |
| 6236325 | Position detector with irregularity detectable function and cable for use in the same | Shingo Kuroki, Hiroaki Kawada | 2001-05-22 |