Issued Patents All Time
Showing 26–46 of 46 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5174881 | Apparatus for forming a thin film on surface of semiconductor substrate | Masanobu Iwasaki, Hiromi Itoh, Akira Tokui, Katsuyoshi Mitsui | 1992-12-29 |
| 5141882 | Semiconductor field effect device having channel stop and channel region formed in a well and manufacturing method therefor | Shigeki Komori | 1992-08-25 |
| 5138420 | Semiconductor device having first and second type field effect transistors separated by a barrier | Shigeki Komori | 1992-08-11 |
| 5087588 | Method of making a side wall contact with reactive ion etching | Masahiro Shimizu | 1992-02-11 |
| 5061975 | MOS type field effect transistor having LDD structure | Masahide Inuishi | 1991-10-29 |
| 5061654 | Semiconductor integrated circuit having oxide regions with different thickness | Masahiro Shimizu | 1991-10-29 |
| 5047818 | Semiconductor memory device having buried structure to suppress soft errors | — | 1991-09-10 |
| 5045901 | Double diffusion metal-oxide-semiconductor device having shallow source and drain diffused regions | Shigeki Komori | 1991-09-03 |
| 5028560 | Method for forming a thin layer on a semiconductor substrate | Akira Tokui | 1991-07-02 |
| 5023682 | Semiconductor memory device | Masahiro Shimizu, Hiroki Shimano, Masahide Inuishi | 1991-06-11 |
| 5019520 | Method for preparing a high mobility, lightly-doped channel mis-type FET with reduced latch up and punchthrough | Shigeki Komori, Shigeru Kusunoki | 1991-05-28 |
| 4978629 | Method of making a metal-oxide-semiconductor device having shallow source and drain diffused regions | Shigeki Komori | 1990-12-18 |
| 4942448 | Structure for isolating semiconductor components on an integrated circuit and a method of manufacturing therefor | Masahide Inuishi, Masahiro Shimizu | 1990-07-17 |
| 4931897 | Method of manufacturing semiconductor capacitive element | Masahiro Shimizu, Hiroshi Miyatake | 1990-06-05 |
| 4916508 | CMOS type integrated circuit and a method of producing same | Tatsuhiko Ikeda, Tatsuo Okamoto | 1990-04-10 |
| 4859615 | Semiconductor memory cell capacitor and method for making the same | Takayuki Matsukawa | 1989-08-22 |
| 4855953 | Semiconductor memory device having stacked memory capacitors and method for manufacturing the same | Masahiro Shimizu, Kazuyasu Fujishima, Yoshio Matsuda | 1989-08-08 |
| 4708904 | Semiconductor device and a method of manufacturing the same | Masahiro Shimizu, Tatsuo Okamoto | 1987-11-24 |
| 4707723 | Semiconductor device using a refractory metal as an electrode and interconnection | Tatsuo Okamoto, Masahiro Shimizu | 1987-11-17 |
| 4702797 | Method of manufacturing semiconductor memory device | Hiroki Shimano, Masahiro Shimizu, Masahide Inuishi | 1987-10-27 |
| 4441932 | Process for preparing semiconductor device having active base region implanted therein using walled emitter opening and the edge of dielectric isolation zone | Yoichi Akasaka | 1984-04-10 |