| 7889539 |
Multi-resistive state memory device with conductive oxide electrodes |
Darrell Rinerson, Edmond R. Ward, Steve Kuo-Ren Hsia, Steven W. Longcor, Christophe J. Chevallier +2 more |
2011-02-15 |
| 7884349 |
Selection device for re-writable memory |
Darrell Rinerson, Steve Kuo-Ren Hsia, Steven W. Longcor, Edmond R. Ward, Christophe J. Chevallier |
2011-02-08 |
| 7633790 |
Multi-resistive state memory device with conductive oxide electrodes |
Darrel Rinerson, Edmond R. Ward, Steve Kuo-Ren Hsia, Steven W. Longcor, Christophe J. Chevallier +2 more |
2009-12-15 |
| 7538338 |
Memory using variable tunnel barrier widths |
Darrell Rinerson, Christophe J. Chevallier, Edmond R. Ward |
2009-05-26 |
| 7400006 |
Conductive memory device with conductive oxide electrodes |
Darrell Rinerson, Steve Kuo-Ren Hsia, Steven W. Longcor |
2008-07-15 |
| 7394679 |
Multi-resistive state element with reactive metal |
Darrell Rinerson, Edmond R. Ward, Steve Kuo-Ren Hsia, Steven W. Longcor, Christophe J. Chevallier +2 more |
2008-07-01 |
| 7326979 |
Resistive memory device with a treated interface |
Darrell Rinerson, John Sanchez, Steven W. Longcor, Steve Kuo-Ren Hsia, Edmond R. Ward +1 more |
2008-02-05 |
| 7186569 |
Conductive memory stack with sidewall |
Darrell Rinerson, Christophe J. Chevallier, Steve Kuo-Ren Hsia, Steven W. Longcor, Emond Ward |
2007-03-06 |
| 7180772 |
High-density NVRAM |
Darrell Rinerson, Steven W. Longcor, Edmond R. Ward |
2007-02-20 |
| 7095643 |
Re-writable memory with multiple memory layers |
Darrell Rinerson, Christophe J. Chevallier, Steven W. Longcor, Edmond R. Ward |
2006-08-22 |
| 7082052 |
Multi-resistive state element with reactive metal |
Darrell Rinerson, Edmond R. Ward, Steve Kuo-Ren Hsia, Steven W. Longcor, Christophe J. Chevallier +2 more |
2006-07-25 |
| 7079442 |
Layout of driver sets in a cross point memory array |
Darrell Rinerson, Christophe J. Chevallier, Steven W. Longcor, Edmond R. Ward |
2006-07-18 |
| 7071008 |
Multi-resistive state material that uses dopants |
Darrell Rinerson, Christophe J. Chevallier, Steven W. Longcor, Edmond R. Ward, Steve Kuo-Ren Hsia |
2006-07-04 |
| 7067862 |
Conductive memory device with conductive oxide electrodes |
Darrell Rinerson, Steven W. Longcor, Steve Kuo-Ren Hsia, Edmond R. Ward, Christophe J. Chevallier |
2006-06-27 |
| 7057914 |
Cross point memory array with fast access time |
Darrell Rinerson, Christophe J. Chevallier, Steven W. Longcor, Edmond R. Ward, Steve Kuo-Ren Hsia |
2006-06-06 |
| 7042035 |
Memory array with high temperature wiring |
Darrell Rinerson, Steven W. Longcor, Steve Kuo-Ren Hsia, Edmond R. Ward, Christophe J. Chevallier |
2006-05-09 |
| 7038935 |
2-terminal trapped charge memory device with voltage switchable multi-level resistance |
Darrell Rinerson, Steven W. Longcor, Edmond R. Ward, Steve Kuo-Ren Hsia, Christophe J. Chevallier |
2006-05-02 |
| 6970375 |
Providing a reference voltage to a cross point memory array |
Darrell Rinerson, Christophe J. Chevallier, Steven W. Longcor, Edmond R. Ward, Steve Kuo-Ren Hsia |
2005-11-29 |
| 6965137 |
Multi-layer conductive memory device |
Steven W. Longcor, Darrell Rinerson, Steve Kuo-Ren Hsia |
2005-11-15 |
| 6917539 |
High-density NVRAM |
Darrell Rinerson, Steven W. Longcor, Edmond R. Ward, Steve Kuo-Ren Hsia |
2005-07-12 |
| 6909632 |
Multiple modes of operation in a cross point array |
Darrell Rinerson, Christophe J. Chevallier, Steven W. Longcor, Edmond R. Ward, Steve Kuo-Ren Hsia |
2005-06-21 |
| 6906939 |
Re-writable memory with multiple memory layers |
Darrell Rinerson, Christophe J. Chevallier, Steven W. Longcor, Edmond R. Ward |
2005-06-14 |
| 6870755 |
Re-writable memory with non-linear memory element |
Darrell Rinerson, Christophe J. Chevallier, Steven W. Longcor, Edmond R. Ward, Steve Kuo-Ren Hsia |
2005-03-22 |
| 6850429 |
Cross point memory array with memory plugs exhibiting a characteristic hysteresis |
Darrell Rinerson, Steven W. Longcor, Steve Kuo-Ren Hsia, Edmond R. Ward, Christophe J. Chevallier |
2005-02-01 |
| 6834008 |
Cross point memory array using multiple modes of operation |
Darrell Rinerson, Christophe J. Chevallier, Steven W. Longcor, Edmond R. Ward, Steve Kuo-Ren Hsia |
2004-12-21 |