HZ

Hongbin Zhu

Micron: 41 patents #457 of 6,345Top 8%
YC Yangtze Memory Technologies Co.: 39 patents #13 of 626Top 3%
IN Intel: 8 patents #4,870 of 30,777Top 20%
AU Auburn University: 1 patents #267 of 580Top 50%
JC Jiangsu Electric Power Research Institute Co.: 1 patents #16 of 97Top 20%
Overall (All Time): #17,425 of 4,157,543Top 1%
91
Patents All Time

Issued Patents All Time

Showing 76–91 of 91 patents

Patent #TitleCo-InventorsDate
9613973 Memory having a continuous channel Luan C. Tran, John D. Hopkins, Yushi Hu 2017-04-04
9595531 Aluminum oxide landing layer for conductive channels for a three dimensional circuit device Gordon A. Haller, Fatma Arzum Simsek-Ege 2017-03-14
9431410 Methods and apparatuses having memory cells including a monolithic semiconductor channel Jie Sun, Zhenyu Lu, Roger W. Lindsay, Brian Cleereman, John D. Hopkins +3 more 2016-08-30
9305844 Method of making a semiconductor device Gordon A. Haller, Paul D. Long 2016-04-05
9287379 Memory arrays John Mark Meldrim, Yushi Hu, Rita J. Klein, John D. Hopkins, Gordon A. Haller +1 more 2016-03-15
9048194 Method for selectively modifying spacing between pitch multiplied structures 2015-06-02
8963156 Semiconductor devices including WiSX Gordon A. Haller, Paul D. Long 2015-02-24
8696922 Methods of plasma etching platinum-comprising materials, methods of processing semiconductor substrates in the fabrication of integrated circuitry, and methods of forming a plurality of memory cells Mark Kiehlbauch, Alex J. Schrinsky 2014-04-15
8507384 Method for selectively modifying spacing between pitch multiplied structures 2013-08-13
8409457 Methods of forming a photoresist-comprising pattern on a substrate Zishu Zhang, Anton J. deVilliers, Alex J. Schrinsky 2013-04-02
8173507 Methods of forming integrated circuitry comprising charge storage transistors Chan Lim, Jennifer Lequn Liu, Brian Dolan, Saurabh Keshav 2012-05-08
8030218 Method for selectively modifying spacing between pitch multiplied structures 2011-10-04
7985681 Method for selectively forming symmetrical or asymmetrical features using a symmetrical photomask during fabrication of a semiconductor device and electronic systems including the semiconductor device Jeremy Madsen 2011-07-26
7898019 Semiconductor constructions having multiple patterned masking layers over NAND gate stacks David J. Keller, Alex J. Schrinsky 2011-03-01
7476588 Methods of forming NAND cell units with string gates of various widths David J. Keller, Alex J. Schrinsky 2009-01-13
6153061 Method of synthesizing cubic boron nitride films Yonhua Tzeng 2000-11-28