Issued Patents All Time
Showing 126–150 of 192 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6835674 | Methods for treating pluralities of discrete semiconductor substrates | Trung T. Doan, Lyle Breiner, Lingyi A. Zheng | 2004-12-28 |
| 6797558 | Methods of forming a capacitor with substantially selective deposite of polysilicon on a substantially crystalline capacitor dielectric layer | Michael Nuttall, Yongjun Jeff Hu | 2004-09-28 |
| 6791138 | Use of atomic oxygen process for improved barrier layer | Ronald A. Weimer | 2004-09-14 |
| 6791113 | Capacitor constructions comprising a nitrogen-containing layer over a rugged polysilicon layer | Behnam Moradi, Lingyi A. Zheng, John Packard | 2004-09-14 |
| 6787834 | Even nucleation between silicon and oxide surfaces for thin silicon nitride film growth | — | 2004-09-07 |
| 6756264 | Applying epitaxial silicon in disposable spacer flow | Chih-Chen Cho | 2004-06-29 |
| 6756265 | Methods of forming a capacitor structure | Shenlin Chen | 2004-06-29 |
| 6756266 | Capacitor array structure for semiconductor devices | — | 2004-06-29 |
| 6750172 | Nanometer engineering of metal-support catalysts | Yongjun Jeff Hu | 2004-06-15 |
| 6740574 | Methods of forming DRAM assemblies, transistor devices, and openings in substrates | Fernando Gonzalez | 2004-05-25 |
| 6716687 | FET having epitaxial silicon growth | Zhongze Wang, Chih-Chen Cho | 2004-04-06 |
| 6716716 | Even nucleation between silicon and oxide surfaces for thin silicon nitride film growth | — | 2004-04-06 |
| 6703268 | Method to fabricate an intrinsic polycrystalline silicon film | — | 2004-03-09 |
| 6704188 | Ultra thin TCS (SiCL4) cell nitride for dram capacitor with DCS (SiH2Cl2) interface seeding layer | Lingyi A. Zheng | 2004-03-09 |
| 6699752 | Formation of conductive rugged silicon | Randhir P. S. Thakur | 2004-03-02 |
| 6696715 | Method and structure for reducing leakage current in capacitors | Lingyi A. Zheng | 2004-02-24 |
| 6693007 | Methods of utilizing a sacrificial layer during formation of a capacitor | Shenlin Chen | 2004-02-17 |
| 6664198 | Method of forming a silicon nitride dielectric layer | Fernando Gonzalez, John H. Zhang | 2003-12-16 |
| 6613628 | Method and structure for reducing leakage current in capacitors | Lingyi A. Zheng | 2003-09-02 |
| 6608342 | Container capacitor structure and method of formation thereof | D. Mark Durcan, Trung T. Doan, Roger Lee, Fernando Gonzalez | 2003-08-19 |
| 6607965 | Methods of forming capacitors | Behnam Moradi, Lingyi A. Zheng, John Packard | 2003-08-19 |
| 6600207 | Structure to reduce line-line capacitance with low K material | Ying Huang | 2003-07-29 |
| 6583006 | Method to reduce floating grain defects in dual-sided container capacitor fabrication | — | 2003-06-24 |
| 6583441 | Capacitor constructions comprising a nitrogen-containing layer over a rugged polysilicon layer | Behnam Moradi, Lingyi A. Zheng, John Packard | 2003-06-24 |
| 6562684 | Methods of forming dielectric materials | Behnam Moradi, Lingyi A. Zheng, John Packard | 2003-05-13 |