Thomas E. Doane — 7 Patents at Memc Electronic Materials

Thomas E. Doane has been granted 7 US patents while listed as an inventor at Memc Electronic Materials. The first was granted in 1998 and the most recent in November 2016. Thomas E. Doane ranks #680,018 of 4,157,543 US inventors in our database (top 16.4%). Patent records list Thomas E. Doane in Troy, MO, US.

Issued Patents All Time

Showing 1–7 of 7 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
9499920	Methods for producing rectangular seeds for ingot growth	Jihong John Chen, Susan S. Dwyer, Shawn Wesley Hayes, Dale A. Witte, Linda K. Swiney +1 more	2016-11-22
9136185	Methods and systems for grain size evaluation of multi-cystalline solar wafers	Gang Shi, Steven L. Kimbel, Robert H. Fuerhoff	2015-09-15
9111745	Methods for producing rectangular seeds for ingot growth	Jihong John Chen, Susan S. Dwyer, Shawn Wesley Hayes, Dale A. Witte, Linda K. Swiney +1 more	2015-08-18
8309464	Methods for etching the edge of a silicon wafer	Henry F. Erk, Peter Albrecht, Eugene R. Hollander, Judith A. Schmidt, Roland R. Vandamme +1 more	2012-11-13	$4,740,000
8192822	Edge etched silicon wafers	Henry F. Erk, Peter Albrecht, Eugene R. Hollander, Judith A. Schmidt, Roland R. Vandamme +1 more	2012-06-05	$3,176,000
7323421	Silicon wafer etching process and composition	Mark Stinson, Henry F. Erk, Guoqiang Zhang, Mick Bjelopavlic, Alexis Grabbe +3 more	2008-01-29	$177,399,000
5837662	Post-lapping cleaning process for silicon wafers	Jing Chai, Henry F. Erk, Judith A. Schmidt	1998-11-17	$7,030,000

Thomas E. Doane — 7 Patents

Issued Patents All Time

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