Issued Patents All Time
Showing 76–100 of 125 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8329737 | Benzimidazoles as selective kinase inhibitors | Michelle Leanne Styles, Herbert Rudolf Treutlein, Andrew Frederick Wilks, Marcel Robert Kling, Xianyong Bu +1 more | 2012-12-11 |
| 8330213 | Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges | Mohamed N. Darwish, Richard A. Blanchard | 2012-12-11 |
| 8319278 | Power device structures and methods using empty space zones | Mohamed N. Darwish, Richard A. Blanchard | 2012-11-27 |
| 8310006 | Devices, structures, and methods using self-aligned resistive source extensions | Richard A. Blanchard, Mohamed N. Darwish | 2012-11-13 |
| 8310007 | Integrated power supplies and combined high-side plus low-side switches | Mohamed N. Darwish | 2012-11-13 |
| 8310001 | MOSFET switch with embedded electrostatic charge | Mohamed N. Darwish | 2012-11-13 |
| 8304329 | Power device structures and methods | Mohamed N. Darwish | 2012-11-06 |
| 8294235 | Edge termination with improved breakdown voltage | Mohamed N. Darwish, Shih-Tzung Su | 2012-10-23 |
| 8076719 | Semiconductor device structures and related processes | Mohamed N. Darwish | 2011-12-13 |
| 7989293 | Trench device structure and fabrication | Richard A. Blanchard | 2011-08-02 |
| 7923804 | Edge termination with improved breakdown voltage | Mohamed N. Darwish, Shih-Tzung Su | 2011-04-12 |
| 7911021 | Edge termination for semiconductor devices | Amit Paul, Mohamed N. Darwish | 2011-03-22 |
| 7910439 | Super self-aligned trench MOSFET devices, methods, and systems | Mohamed N. Darwish | 2011-03-22 |
| 7799642 | Trench MOSFET and method of manufacture utilizing two masks | Shih-Tzung Su, Poi Sun, Kao-Way Tu, Tai Chiang Chen, Long Lv +1 more | 2010-09-21 |
| 7687352 | Trench MOSFET and method of manufacture utilizing four masks | Shih-Tzung Su, Poi Sun, Kao-Way Tu, Tai Chiang Chen, Long Lv +1 more | 2010-03-30 |
| 7633102 | Low voltage high density trench-gated power device with uniformly doped channel and its edge termination | — | 2009-12-15 |
| 7501323 | Power MOSFET and method for forming same using a self-aligned body implant | — | 2009-03-10 |
| 7388254 | MOS-gated device having a buried gate and process for forming same | Christopher Boguslaw Kocon | 2008-06-17 |
| 7214601 | Manufacturing process and structure of power junction field effect transistor | Po-I Sun | 2007-05-08 |
| 7166866 | Edge termination for silicon power devices | Gary Mark Dolry, Praveen MurAleedharan | 2007-01-23 |
| 7105228 | Method for making shaped structures with internally coated cavities | Johannes Averdung, Andreas Greiner, Joachim H. Wendorff, Haoquing Hou, Michael Bognitzki | 2006-09-12 |
| 7098500 | Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge | — | 2006-08-29 |
| 7098108 | Semiconductor device having reduced effective substrate resistivity and associated methods | — | 2006-08-29 |
| 6946348 | Low voltage high density trench-gated power device with uniformity doped channel and its edge termination technique | — | 2005-09-20 |
| 6929988 | Method of making an ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge | — | 2005-08-16 |