Issued Patents All Time
Showing 101–125 of 125 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6921957 | Low forward voltage drop schottky barrier diode and manufacturing method therefor | Ming Zhou, Tzong-Shiann Wu | 2005-07-26 |
| 6921939 | Power MOSFET and method for forming same using a self-aligned body implant | — | 2005-07-26 |
| 6916712 | MOS-gated device having a buried gate and process for forming same | Christopher Boguslaw Kocon | 2005-07-12 |
| 6828177 | Gate pad protection structure for power semiconductor device and manufacturing method therefor | Ming Zhou, Tzong-Shiann Wu | 2004-12-07 |
| 6784505 | Low voltage high density trench-gated power device with uniformly doped channel and its edge termination technique | — | 2004-08-31 |
| 6759719 | Edge termination for silicon power devices | Gary Mark Dolry, Praveen MurAleedharan | 2004-07-06 |
| 6683346 | Ultra dense trench-gated power-device with the reduced drain-source feedback capacitance and Miller charge | — | 2004-01-27 |
| 6677202 | Power MOS device with increased channel width and process for forming same | Dexter Elson Semple | 2004-01-13 |
| 6638826 | Power MOS device with buried gate | Gary M. Dolny, Christopher Boguslaw Kocon, Linda S. Brush | 2003-10-28 |
| 6589830 | Self-aligned process for fabricating power MOSFET with spacer-shaped terraced gate | — | 2003-07-08 |
| 6552391 | Low voltage dual-well trench MOS device | Carl F. Wheatley, Jr. | 2003-04-22 |
| 6534347 | Edge termination for silicon power devices | Gary Mark Dolry, Praveen MurAleedharan | 2003-03-18 |
| 6455379 | Power trench transistor device source region formation using silicon spacer | Linda S. Brush, John J. Hackenberg, Jack H. Linn, George V. Rouse | 2002-09-24 |
| 6445035 | Power MOS device with buried gate and groove | Gary M. Dolny, Christopher Boguslaw Kocon, Linda S. Brush | 2002-09-03 |
| 6373098 | Trench-gated device having trench walls formed by selective epitaxial growth and process for forming device | Linda S. Brush, Christopher Boguslaw Kocon | 2002-04-16 |
| 6362026 | Edge termination for silicon power devices | Gary Mark Dolry, Praveen MurAleedharan | 2002-03-26 |
| 6351009 | MOS-gated device having a buried gate and process for forming same | Christopher Boguslaw Kocon | 2002-02-26 |
| 6246090 | Power trench transistor device source region formation using silicon spacer | Linda S. Brush, John J. Hackenberg, Jack H. Linn, George V. Rouse | 2001-06-12 |
| 6242784 | Edge termination for silicon power devices | Gary Mark Dolry, Praveen MurAleedharan | 2001-06-05 |
| 6218701 | Power MOS device with increased channel width and process for forming same | Dexter Elson Semple | 2001-04-17 |
| 6188105 | High density MOS-gated power device and process for forming same | Christopher Boguslaw Kocon | 2001-02-13 |
| 6137139 | Low voltage dual-well MOS device having high ruggedness, low on-resistance, and improved body diode reverse recovery | Carl F. Wheatley, Jr. | 2000-10-24 |
| 6121089 | Methods of forming power semiconductor devices having merged split-well body regions therein | Carl F. Wheatley, Jr. | 2000-09-19 |
| 6104062 | Semiconductor device having reduced effective substrate resistivity and associated methods | — | 2000-08-15 |
| 4763506 | Automatic tube bending machine | — | 1988-08-16 |