SY

Seiko Yoshida

KT Kabushiki Kaisha Toshiba: 6 patents #4,898 of 21,451Top 25%
IBM: 3 patents #26,272 of 70,183Top 40%
SA Siemens Aktiengesellschaft: 1 patents #10,653 of 22,248Top 50%
📍 Fishkill, NY: #117 of 387 inventorsTop 35%
🗺 New York: #20,336 of 115,490 inventorsTop 20%
Overall (All Time): #761,830 of 4,157,543Top 20%
7
Patents All Time

Issued Patents All Time

Showing 1–7 of 7 patents

Patent #TitleCo-InventorsDate
6333274 Method of manufacturing a semiconductor device including a seamless shallow trench isolation step Hiroyuki Akatsu, Soichi Nadahara, Takashi Nakao 2001-12-25
6051885 Semiconductor device having a conductor with a wedge shaped depression 2000-04-18
6046487 Shallow trench isolation with oxide-nitride/oxynitride liner John Benedict, David M. Dobuzinsky, Philip L. Flaitz, Erwin Hammerl, Herbert L. Ho +3 more 2000-04-04
5885863 Method of making a contact for contacting an impurity region formed in a semiconductor substrate 1999-03-23
5763315 Shallow trench isolation with oxide-nitride/oxynitride liner John Benedict, David M. Dobuzinsky, Philip L. Flaitz, Erwin Hammerl, Herbert L. Ho +3 more 1998-06-09
5719072 Method of manufacturing a semiconductor using multi-layer antireflective layer Souichi Sugiura, Hidehiro Watanabe 1998-02-17
5486719 Semiconductor device including insulating film arrangement having low reflectance Souichi Sugiura, Hidehiro Watanabe 1996-01-23