HN

Hajime Nagano

KT Kabushiki Kaisha Toshiba: 36 patents #609 of 21,451Top 3%
Toshiba Memory: 6 patents #309 of 1,971Top 20%
Mitsubishi Electric: 4 patents #7,099 of 25,717Top 30%
Kyocera: 3 patents #999 of 3,732Top 30%
YA Yazaki: 1 patents #2,077 of 3,427Top 65%
📍 Yokkaichi, JP: #49 of 2,072 inventorsTop 3%
Overall (All Time): #54,590 of 4,157,543Top 2%
50
Patents All Time

Issued Patents All Time

Showing 26–50 of 50 patents

Patent #TitleCo-InventorsDate
7381389 Wet gas purification method and system for practicing the same Masahiro Harada, Shintaro Honjo, Makoto Susaki, Kazuo Ishida, Susumu Okino 2008-06-03
7323748 Semiconductor device having epitaxial layer Takashi Yamada, Takeshi Hamamoto 2008-01-29
7294562 Semiconductor substrate, method of manufacturing the same, semiconductor device, and method of manufacturing the same Kiyotaka Miyano, Ichiro Mizushima 2007-11-13
7285825 Element formation substrate for forming semiconductor device Shinichi Nitta, Takashi Yamada, Tsutomu Sato, Katsujiro Tanzawa, Ichiro Mizushima 2007-10-23
7265017 Method for manufacturing partial SOI substrates Ichiro Mizushima 2007-09-04
7187035 Semiconductor device comprising multiple layers with trenches formed on a semiconductor substrate Takashi Yamada, Tsutomu Sato, Ichiro Mizushima, Hisato Oyamatsu 2007-03-06
7148543 Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions Takashi Yamada, Ichiro Mizushima, Tsutomu Sato, Hisato Oyamatsu, Shinichi Nitta 2006-12-12
7122864 Semiconductor substrate having a partial SOI structure, method of manufacturing the same, a semiconductor device having a partial SOI structure, and method of manufacturing the same Kiyotaka Miyano, Ichiro Mizushima 2006-10-17
7112822 Semiconductor device using partial SOI substrate and manufacturing method thereof Shinichi Nitta, Hisato Oyamatsu 2006-09-26
7095081 Semiconductor device and manufacturing method thereof Takashi Yamada, Takeshi Hamamoto 2006-08-22
7075169 Semiconductor device having a hollow region and method of manufacturing the same Yoshihiro Minami, Takashi Yamada, Yusuke Kohyama, Tsutomu Sato 2006-07-11
7071039 Manufacturing method of partial SOI wafer, semiconductor device using the partial SOI wafer and manufacturing method thereof Takashi Yamada, Tsutomu Sato, Ichiro Mizushima, Osamu Fujii 2006-07-04
7057259 Semiconductor wafer with ID mark, equipment for and method of manufacturing semiconductor device from them Tsunetoshi Arikado, Masao Iwase, Soichi Nadahara, Yuso Udo, Yukihiro Ushiku +8 more 2006-06-06
7049661 Semiconductor device having epitaxial layer Takashi Yamada, Takeshi Hamamoto 2006-05-23
7018904 Semiconductor chip having multiple functional blocks integrated in a single chip and method for fabricating the same Takashi Yamada, Ichiro Mizushima, Tsutomu Sato, Hisato Oyamatsu, Shinichi Nitta 2006-03-28
7019365 Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer Tsutomu Sato, Ichiro Mizushima, Takashi Yamada, Yuso Udo, Shinichi Nitta 2006-03-28
7005115 Gas combustion treatment method and apparatus therefor Masahiro Harada, Makoto Susaki, Kazuo Ishida, Masahiro Hirano, Hiroshi Suzumura +4 more 2006-02-28
6956265 Semiconductor device and method for manufacturing partial SOI substrates Ichiro Mizushima 2005-10-18
6933590 Semiconductor device comprising plurality of semiconductor areas having the same top surface and different film thicknesses and manufacturing method for the same Takashi Yamada, Atsushi Azuma, Yoshihiro Minami, Hiroaki Yamada, Tatsuya Ohguro +2 more 2005-08-23
6906384 Semiconductor device having one of patterned SOI and SON structure Takashi Yamada, Tsutomu Sato, Shinichi Nitta, Ichiro Mizushima, Hisato Oyamatsu +3 more 2005-06-14
6855976 Semiconductor device using partial SOI substrate and manufacturing method thereof Shinichi Nitta, Hisato Oyamatsu 2005-02-15
6835981 Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions Takashi Yamada, Ichiro Mizushima, Tsutomu Sato, Hisato Oyamatsu, Shinichi Nitta 2004-12-28
6770119 Mercury removal method and system Masahiro Harada, Shintaro Honjo, Makoto Suzaki, Kazuo Ishida, Susumu Okino 2004-08-03
6630714 Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer Tsutomu Sato, Ichiro Mizushima, Takashi Yamada, Yuso Udo, Shinichi Nitta 2003-10-07
6531754 Manufacturing method of partial SOI wafer, semiconductor device using the partial SOI wafer and manufacturing method thereof Takashi Yamada, Tsutomu Sato, Ichiro Mizushima, Osamu Fujii 2003-03-11