Issued Patents All Time
Showing 1–25 of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12280346 | Micromixer | Hiroshi Itafuji, Mitsuyoshi Ohsaki, Masahide Gunji, Hiroshi Kobayashi, Katsuya Okumura | 2025-04-22 |
| 12196500 | Heat exchange system | Akihiro Ito, Takahiro Minatani | 2025-01-14 |
| 12092242 | Pipe welding structure | Junya Hashizume, Mitsuyoshi Ohsaki | 2024-09-17 |
| 9791808 | Intermediate transfer belt, method for producing the same, and image forming apparatus | Jun Aoto, Hidetaka Kubo, Kenichi Mashiko, Sayaka Katoh, Shigeo Oonuma | 2017-10-17 |
| 9223256 | Intermediate transfer belt method for producing intermediate transfer belt, and image forming apparatus | Sayaka Katoh, Jun Aoto, Kenichi Mashiko, Atsuo Hirai | 2015-12-29 |
| 9063475 | Intermediate transfer belt and electrophotographic apparatus | Jun Aoto, Hidetaka Kubo, Kenichi Mashiko, Sayaka Katoh | 2015-06-23 |
| 8888471 | Liquid feed pump and flow control device | — | 2014-11-18 |
| 8807014 | Multi-layer diaphragm | Hiroshi Itafuji | 2014-08-19 |
| 8760717 | Intermediate transfer belt and image forming apparatus | Hidetaka Kubo, Jun Aoto, Kenichi Mashiko, Sayaka Katoh | 2014-06-24 |
| 8521073 | Intermediate transfer member and image forming apparatus using the same | Hidetaka Kubo, Jun Aoto, Kenichi Mashiko, Sayaka Katoh | 2013-08-27 |
| 7700381 | Semiconductor wafer with ID mark, equipment for and method of manufacturing semiconductor device from them | Tsunetoshi Arikado, Masao Iwase, Soichi Nadahara, Yuso Udo, Yukihiro Ushiku +8 more | 2010-04-20 |
| 7510945 | Element formation substrate, method of manufacturing the same, and semiconductor device | Hajime Nagano, Takashi Yamada, Tsutomu Sato, Katsujiro Tanzawa, Ichiro Mizushima | 2009-03-31 |
| 7439112 | Semiconductor device using partial SOI substrate and manufacturing method thereof | Hajime Nagano, Hisato Oyamatsu | 2008-10-21 |
| 7420249 | Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer | Tsutomu Sato, Hajime Nagano, Ichiro Mizushima, Takashi Yamada, Yuso Udo | 2008-09-02 |
| 7285825 | Element formation substrate for forming semiconductor device | Hajime Nagano, Takashi Yamada, Tsutomu Sato, Katsujiro Tanzawa, Ichiro Mizushima | 2007-10-23 |
| 7148543 | Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions | Takashi Yamada, Hajime Nagano, Ichiro Mizushima, Tsutomu Sato, Hisato Oyamatsu | 2006-12-12 |
| 7112822 | Semiconductor device using partial SOI substrate and manufacturing method thereof | Hajime Nagano, Hisato Oyamatsu | 2006-09-26 |
| 7060133 | Single crystal pulling apparatus for a metal fluoride | Teruhiko Nawata, Hidetaka Miyazaki, Hiroyuki Yanagi, Harumasa Ito, Isao Yamaga | 2006-06-13 |
| 7057259 | Semiconductor wafer with ID mark, equipment for and method of manufacturing semiconductor device from them | Tsunetoshi Arikado, Masao Iwase, Soichi Nadahara, Yuso Udo, Yukihiro Ushiku +8 more | 2006-06-06 |
| 7018904 | Semiconductor chip having multiple functional blocks integrated in a single chip and method for fabricating the same | Takashi Yamada, Hajime Nagano, Ichiro Mizushima, Tsutomu Sato, Hisato Oyamatsu | 2006-03-28 |
| 7019365 | Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer | Tsutomu Sato, Hajime Nagano, Ichiro Mizushima, Takashi Yamada, Yuso Udo | 2006-03-28 |
| 6906384 | Semiconductor device having one of patterned SOI and SON structure | Takashi Yamada, Tsutomu Sato, Hajime Nagano, Ichiro Mizushima, Hisato Oyamatsu +3 more | 2005-06-14 |
| 6855976 | Semiconductor device using partial SOI substrate and manufacturing method thereof | Hajime Nagano, Hisato Oyamatsu | 2005-02-15 |
| 6835981 | Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions | Takashi Yamada, Hajime Nagano, Ichiro Mizushima, Tsutomu Sato, Hisato Oyamatsu | 2004-12-28 |
| 6630714 | Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer | Tsutomu Sato, Hajime Nagano, Ichiro Mizushima, Takashi Yamada, Yuso Udo | 2003-10-07 |