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Mark van Dal — 82 Patents

TSMC: 79 patents #377 of 12,232Top 4%

NBNxp B.V.: 3 patents #771 of 3,591Top 25%

Linden, BE: #2 of 41 inventorsTop 5%

Overall (All Time): #21,533 of 4,157,543Top 1%

82 Patents All Time

Mark van Dal has been granted 82 US patents while listed as an inventor at TSMC. The first was granted in 2010 and the most recent in May 2025. Mark van Dal ranks #21,533 of 4,157,543 US inventors in our database (top 0.52%). Patent records list Mark van Dal in Linden, BE.

Patents per Year

Issued Patents All Time

Showing 1–25 of 82 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
12317586	Semiconductor device having fin structures with unequal channel heights and manufacturing method thereof	Gerben Doornbos	2025-05-27
12300550	Complementary MOS FETS vertically arranged and including multiple dielectric layers surrounding the MOS FETS	Gerben Doornbos	2025-05-13
12015083	Thin-sheet FinFET device	Martin Christopher Holland, Matthias Passlack	2024-06-18	$18,441,000
12010856	Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor	Timothy Vasen, Gerben Doornbos, Matthias Passlack	2024-06-11	$12,601,000
11908922	Heterogeneous semiconductor device substrates with high quality epitaxy	Carlos H. Diaz, Martin Christopher Holland	2024-02-20	$8,912,000
11830947	Method of manufacturing a semiconductor device and a semiconductor device	Blandine Duriez, Martin Christopher Holland, Gerben Doornbos	2023-11-28	$8,219,000
11784219	Method for manufacturing semiconductor device with spacer layer	Gerben Doornbos, Chung-Te Lin	2023-10-10	$9,553,000
11728222	Complementary MOS FETS vertically arranged and including multiple dielectric layers surrounding the MOS FETS	Gerben Doornbos	2023-08-15	$5,717,000
11682587	Semiconductor device and manufacturing method thereof	Gerben Doornbos	2023-06-20	$9,516,000
11677004	Strained channel field effect transistor	Gerben Doornbos, Georgios Vellianitis, Tsung-Lin Lee, Feng Yuan	2023-06-13	$10,228,000
11600616	Semiconductor device including FINFETs having different channel heights	Gerben Doornbos	2023-03-07	$10,667,000
11437594	Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor	Timothy Vasen, Gerben Doornbos, Matthias Passlack	2022-09-06	$6,920,000
11309417	Method of manufacturing a semiconductor device and a semiconductor device	Blandine Duriez, Martin Christopher Holland, Gerben Doornbos	2022-04-19	$10,829,000
11195913	Semiconductor device including fin structure and manufacturing method thereof	Gerben Doornbos, Chung-Te Lin	2021-12-07	$18,746,000
11177391	Semiconductor device and manufacturing method thereof	—	2021-11-16	$14,943,000
11114546	Semiconductor device and formation thereof	Blandine Duriez	2021-09-07	$22,290,000
11081589	Semiconductor device and manufacturing method thereof	—	2021-08-03	$15,057,000
11024548	Complementary MOS FETS vertically arranged and including multiple dielectric layers surrounding the MOS FETS	Gerben Doornbos	2021-06-01	$15,212,000
11018243	Semiconductor device and manufacturing method thereof	Blandine Duriez, Martin Christopher Holland, Georgios Vellianitis	2021-05-25	$13,899,000
10978557	Method of fabricating semiconductor device with nanowires	Martin Christopher Holland, Georgios Vellianitis, Blandine Duriez, Gerben Doornbos	2021-04-13	$14,551,000
10943832	Semiconductor device and manufacturing method thereof	Gerben Doornbos	2021-03-09	$21,774,000
10937908	Thin-sheet FinFET device	Martin Christopher Holland, Matthias Passlack	2021-03-02	$23,766,000
10867866	Semiconductor device and manufacturing method thereof	Gerben Doornbos	2020-12-15	$3,031,000
10818778	Heterogeneous semiconductor device substrates with high quality epitaxy	Carlos H. Diaz, Martin Christopher Holland	2020-10-27	$13,071,000
10797148	III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereof	Matthias Passlack, Martin Christopher Holland	2020-10-06	$12,045,000