GS

George Samachisa

ST Sandisk Technologies: 49 patents #209 of 2,224Top 10%
S3 Sandisk 3D: 27 patents #17 of 180Top 10%
SM Sunrise Memory: 7 patents #12 of 31Top 40%
SU Sundisk: 1 patents #17 of 19Top 90%
📍 Atherton, CA: #13 of 431 inventorsTop 4%
🗺 California: #3,101 of 386,348 inventorsTop 1%
Overall (All Time): #20,427 of 4,157,543Top 1%
84
Patents All Time

Issued Patents All Time

Showing 51–75 of 84 patents

Patent #TitleCo-InventorsDate
7830698 Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same Xiying Chen, Bing K. Yen, Dat Nguyen, Huiwen Xu, Tanmay Kumar +1 more 2010-11-09
7579247 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements Eliyahou Harari, Jack Yuan, Daniel C. Guterman 2009-08-25
7491999 Non-volatile memory cells utilizing substrate trenches Eliyahou Harari, Jack Yuan, Henry Chien 2009-02-17
7479677 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements Eliyahou Harari, Jack Yuan, Daniel C. Guterman 2009-01-20
7468915 Method of reducing disturbs in non-volatile memory Daniel C. Guterman, Brian Murphy, Chi-Ming Wang, Khandker N. Quader 2008-12-23
7443736 Substrate electron injection techniques for programming non-volatile charge storage memory cells and for controlling program disturb 2008-10-28
7342279 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements Eliyahou Harari, Jack Yuan, Daniel C. Guterman 2008-03-11
7341918 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements Eliyahou Harari, Jack Yuan, Daniel C. Guterman 2008-03-11
7230847 Substrate electron injection techniques for programming non-volatile charge storage memory cells 2007-06-12
7211866 Scalable self-aligned dual floating gate memory cell array and methods of forming the array Jack Yuan, Eliyahou Harari, Yupin Fong 2007-05-01
7145804 Method of reducing disturbs in non-volatile memory Daniel C. Guterman, Brian Murphy, Chi-Ming Wang, Khandker N. Quader 2006-12-05
7087951 Non-volatile memory cells utilizing substrate trenches Eliyahou Harari, Jack Yuan, Henry Chien 2006-08-08
6980471 Substrate electron injection techniques for programming non-volatile charge storage memory cells 2005-12-27
6977844 Method of reducing disturbs in non-volatile memory Daniel C. Guterman, Brian Murphy, Chi-Ming Wang, Khandker N. Quader 2005-12-20
6953970 Scalable self-aligned dual floating gate memory cell array and methods of forming the array Jack Yuan, Eliyahou Harari, Yupin Fong 2005-10-11
6936887 Non-volatile memory cells utilizing substrate trenches Eliyahou Harari, Jack Yuan, Henry Chien 2005-08-30
6925007 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements Eliyahou Harari, Jack Yuan, Daniel C. Guterman 2005-08-02
6897522 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements Eliyahou Harari, Jack Yuan, Daniel C. Guterman 2005-05-24
6894343 Floating gate memory cells utilizing substrate trenches to scale down their size Eliyahou Harari, Jack Yuan 2005-05-17
6888752 Method of reducing disturbs in non-volatile memory John S. Mangan, Daniel C. Guterman, Brian Murphy, Chi-Ming Wang, Khandker N. Quader 2005-05-03
6762092 Scalable self-aligned dual floating gate memory cell array and methods of forming the array Jack Yuan, Eliyahou Harari, Yupin Fong 2004-07-13
6717851 Method of reducing disturbs in non-volatile memory John S. Mangan, Daniel C. Guterman, Brian Murphy, Chi-Ming Wang, Khandker N. Quader 2004-04-06
6570785 Method of reducing disturbs in non-volatile memory John S. Mangan, Daniel C. Guterman, Brian Murphy, Chi-Ming Wang 2003-05-27
6532172 Steering gate and bit line segmentation in non-volatile memories Eliyahou Harari, Daniel C. Guterman, Jack Yuan 2003-03-11
6420231 Processing techniques for making a dual floating gate EEPROM cell array Eliyahou Harari, Jack Yuan 2002-07-16