YH

Yuesong He

AM AMD: 13 patents #907 of 9,279Top 10%
BL Beijing Qihoo Techology Company Limited: 2 patents #43 of 230Top 20%
FL Fujitsu Amd Semiconductor Limited: 1 patents #14 of 40Top 35%
Fujitsu Limited: 1 patents #14,843 of 24,456Top 65%
Overall (All Time): #320,292 of 4,157,543Top 8%
15
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
10218767 Method, system and browser for executing active object of browser Jinwei Li, Zhi Chen, Yu Fu, Ming-Chung Li, Huan Ren 2019-02-26
9513937 Method and client for using an embedded ActiveX plug-in in a browser Zhi Chen, Jinwei Li, Yu Fu, Huan Ren 2016-12-06
6812521 Method and apparatus for improved performance of flash memory cell devices Kent Kuohua Chang, R. Lee Tan 2004-11-02
6355522 Effect of doped amorphous Si thickness on better poly 1 contact resistance performance for nand type flash memory devices Kent Kuohua Chang, John Jianshi Wang 2002-03-12
6281078 Manufacturing process to eliminate ONO fence material in high density NAND-type flash memory devices Kent Kuohua Chang, John Jianshi Wang, Ken D. Au 2001-08-28
6204159 Method of forming select gate to improve reliability and performance for NAND type flash memory devices Kent Kuohua Chang, Kenneth Wo-Wai Au 2001-03-20
6184084 Method to elimate silicide cracking for nand type flash memory devices by implanting a polish rate improver into the second polysilicon layer and polishing it David Chi, Kent Kuohua Chang 2001-02-06
6177312 Method for removing contaminate nitrogen from the peripheral gate region of a non-volatile memory device during production of such device John Jianshi Wang, Toru Ishigaki, Kent Kuohua Chang, Effiong Ibok 2001-01-23
6146795 Method for manufacturing memory devices Jiahua Huang, Kent Kuohua Chang 2000-11-14
6114230 Nitrogen ion implanted amorphous silicon to produce oxidation resistant and finer grain polysilicon based floating gates Kent Kuohua Chang, David Chi 2000-09-05
6066873 Method and apparatus for preventing P1 punchthrough John Jianshi Wang, Kent Kuohua Chang 2000-05-23
6063668 Poly I spacer manufacturing process to eliminate polystringers in high density nand-type flash memory devices Kent Kuohua Chang, John Jianshi Wang 2000-05-16
6017786 Method for forming a low barrier height oxide layer on a silicon substrate John Jianshi Wang, Dae Yeong Joh 2000-01-25
5981339 Narrower erase distribution for flash memory by smaller poly grain size Kent Kuohua Chang, David Chi 1999-11-09
5972749 Method for preventing P1 punchthrough John Jianshi Wang, Kent Kuohua Chang 1999-10-26