PP

Paul A. Papworth

IBM: 6 patents #16,453 of 70,183Top 25%
SP Silverbrook Research Pty: 4 patents #100 of 146Top 70%
ZA Zamtec: 2 patents #93 of 149Top 65%
📍 Wappingers Falls, NY: #169 of 884 inventorsTop 20%
🗺 New York: #12,360 of 115,490 inventorsTop 15%
Overall (All Time): #422,505 of 4,157,543Top 15%
12
Patents All Time

Issued Patents All Time

Showing 1–12 of 12 patents

Patent #TitleCo-InventorsDate
8444252 Printhead assembly with minimal leakage Sarkis Keshishian, Susan Williams, Kia Silverbrook 2013-05-21
8293057 Double laser drilling of a printhead integrated circuit attachment film Nagesh Ramachandra, Jennifer Mia Fishburn, Paul Timothy Sharp, Susan Williams, Simon Fielder +1 more 2012-10-23
7911024 Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof Herbert L. Ho, Mahender Kumar, Qiqing C. Ouyang, Christopher D. Sheraw, Michael D. Steigerwalt 2011-03-22
7875139 Method of assembling pagewidth printhead Sarkis Keshishian, Susan Williams, Kia Silverbrook 2011-01-25
7845763 Printhead assembly with minimal leakage Sarkis Keshishian, Susan Williams, Kia Silverbrook 2010-12-07
7845755 Printhead integrated circuit attachment film having differentiated adhesive layers Sarkis Keshishian, Susan Williams, Kia Silverbrook 2010-12-07
7763518 Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof Herbert L. Ho, Mahender Kumar, Qiqing C. Ouyang, Christopher D. Sheraw, Michael D. Steigerwalt 2010-07-27
7727348 Method of attaching printhead integrated circuits to an ink manifold using adhesive film Sarkis Keshishian, Susan Williams, Kia Silverbrook 2010-06-01
7691716 Vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness for low-substrate bias operation Herbert L. Ho, Mahender Kumar, Qiging Ouyang, Christopher D. Sheraw, Michael D. Steigerwalt 2010-04-06
7485537 Method of fabricating a vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness Herbert L. Ho, Mahender Kumar, Qiqing C. Ouyang, Christopher D. Sheraw, Michael D. Steigerwalt 2009-02-03
7375410 Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof Herbert L. Ho, Mahender Kumar, Qiqing C. Ouyang, Christopher D. Sheraw, Michael D. Steigerwalt 2008-05-20
7115965 Vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness for low-substrate bias operation Herbert L. Ho, Mahender Kumar, Qiqing C. Ouyang, Christopher D. Sheraw, Michael D. Steigerwalt 2006-10-03