Issued Patents All Time
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9196703 | Selective deposition of diamond in thermal vias | Karl D. Hobart, Tatyana I. Feygelson, Eugene I. Imhoff, Travis J. Anderson, Joshua D. Caldwell +8 more | 2015-11-24 |
| 9048184 | Method of forming a gate contact | Carol Namba, Po-Hsin Liu, Sumiko L. Poust, Michael Wojtowicz, Ronald W. Grundbacher | 2015-06-02 |
| 8431962 | Composite passivation process for nitride FET | Benjamin Heying, Vincent Gambin, Robert Coffie | 2013-04-30 |
| 7897446 | Method of forming a high electron mobility transistor hemt, utilizing self-aligned miniature field mitigating plate and protective dielectric layer | Robert Coffie, Ben Heying, Carol Namba, Po-Hsin Liu, Boris Hikin | 2011-03-01 |
| 7800132 | High electron mobility transistor semiconductor device having field mitigating plate and fabrication method thereof | Carol Namba, Po-Hsin Liu, Robert Coffie, Roger Tsai | 2010-09-21 |
| 7800766 | Method and apparatus for detecting and adjusting substrate height | Carol Namba, Po-Hsin Liu, Mike Wojtowicz, Rob Coffie | 2010-09-21 |
| 7750370 | High electron mobility transistor having self-aligned miniature field mitigating plate on a protective dielectric layer | Robert Coffie, Ben Heying, Carol Namba, Po-Hsin Liu, Boris Hikin | 2010-07-06 |
| 7632726 | Method for fabricating a nitride FET including passivation layers | Benjamin Heying, Vincent Gambin, Robert Coffie | 2009-12-15 |
| 7608865 | Club extension to a T-gate high electron mobility transistor | Carol Namba, Po-Hsin Liu, Michael Wojtowicz, Robert Coffie, Yaochung Chen | 2009-10-27 |
| 6849882 | Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer | Prashant Chavarkar, Stacia Keller, Umesh Mishra, Wladyslaw Walukiewicz, Yifeng Wu | 2005-02-01 |