PL

Po-Hsin Liu

NG Northrop Grumman: 6 patents #475 of 2,250Top 25%
NS Northrop Grumman Space & Mission Systems: 5 patents #1 of 82Top 2%
TL Trw Limited: 1 patents #979 of 2,166Top 50%
📍 Anaheim, CA: #84 of 1,337 inventorsTop 7%
🗺 California: #50,852 of 386,348 inventorsTop 15%
Overall (All Time): #417,814 of 4,157,543Top 15%
12
Patents All Time

Issued Patents All Time

Showing 1–12 of 12 patents

Patent #TitleCo-InventorsDate
9583589 Self-aligned double gate recess for semiconductor field effect transistors Xiaobing Mei, Ling-Shine Lee, Michael D. Lange, Wayne Yoshida 2017-02-28
9048184 Method of forming a gate contact Carol Namba, Sumiko L. Poust, Ioulia Smorchkova, Michael Wojtowicz, Ronald W. Grundbacher 2015-06-02
7897446 Method of forming a high electron mobility transistor hemt, utilizing self-aligned miniature field mitigating plate and protective dielectric layer Ioulia Smorchkova, Robert Coffie, Ben Heying, Carol Namba, Boris Hikin 2011-03-01
7800766 Method and apparatus for detecting and adjusting substrate height Carol Namba, Ioulia Smorchkova, Mike Wojtowicz, Rob Coffie 2010-09-21
7800132 High electron mobility transistor semiconductor device having field mitigating plate and fabrication method thereof Ioulia Smorchkova, Carol Namba, Robert Coffie, Roger Tsai 2010-09-21
7750370 High electron mobility transistor having self-aligned miniature field mitigating plate on a protective dielectric layer Ioulia Smorchkova, Robert Coffie, Ben Heying, Carol Namba, Boris Hikin 2010-07-06
7709860 High electron mobility transistor semiconductor device and fabrication method thereof Linh Dang, Wayne Yoshida, Xiaobing Mei, Jennifer Wang, Jane Lee +3 more 2010-05-04
7608865 Club extension to a T-gate high electron mobility transistor Carol Namba, Ioulia Smorchkova, Michael Wojtowicz, Robert Coffie, Yaochung Chen 2009-10-27
7582518 High electron mobility transistor semiconductor device and fabrication method thereof Linh Dang, Wayne Yoshida, Gerry Mei, Jennifer Wang, Jane Lee +3 more 2009-09-01
7411226 High electron mobility transistor (HEMT) structure with refractory gate metal Yeong-Chang Choug, Ronald W. Grundbacher, Denise L. Leung, Richard Lai 2008-08-12
6569763 Method to separate a metal film from an insulating film in a semiconductor device using adhesive tape Ronald W. Grundbacher, Rosie M. Dia 2003-05-27
5262660 High power pseudomorphic gallium arsenide high electron mobility transistors Dwight C. Streit, Kin L. Tan 1993-11-16