Issued Patents All Time
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9048184 | Method of forming a gate contact | Carol Namba, Po-Hsin Liu, Sumiko L. Poust, Ioulia Smorchkova, Michael Wojtowicz | 2015-06-02 |
| 7411226 | High electron mobility transistor (HEMT) structure with refractory gate metal | Yeong-Chang Choug, Po-Hsin Liu, Denise L. Leung, Richard Lai | 2008-08-12 |
| 6710379 | Fully relaxed channel HEMT device | Michael Wojtowicz, Tsung-Pei Chin, Michael E. Barsky | 2004-03-23 |
| 6569763 | Method to separate a metal film from an insulating film in a semiconductor device using adhesive tape | Po-Hsin Liu, Rosie M. Dia | 2003-05-27 |
| 6524899 | Process for forming a large area, high gate current HEMT diode | Richard Lai, Mark Kintis, Michael E. Barsky, Roger Tsai | 2003-02-25 |
| 6515316 | Partially relaxed channel HEMT device | Michael Wojtowicz, Tsung-Pei Chin, Michael E. Barsky | 2003-02-04 |
| 6452221 | Enhancement mode device | Richard Lai, Yaochung Chen, Michael E. Barsky | 2002-09-17 |
| 6396679 | Single-layer dielectric structure with rounded corners, and circuits including such structures | Richard Lai, Roger Tsai, Michael E. Barsky | 2002-05-28 |
| 6383826 | Method for determining etch depth | Michael E. Barsky, Richard Lai, Rosie M. Dia, Yaochung Chen | 2002-05-07 |