Issued Patents All Time
Showing 26–44 of 44 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10217518 | Reducing hot electron injection type of read disturb in 3D memory device having connected source-end select gates | Yingda Dong | 2019-02-26 |
| 10210941 | Reducing injection type of read disturb in a cold read of a memory device | Yingda Dong | 2019-02-19 |
| 10153051 | Program-verify of select gate transistor with doped channel in NAND string | Yingda Dong, Yen-Lung Li | 2018-12-11 |
| 10121552 | Reducing charge loss in data memory cell adjacent to dummy memory cell | Ashish Baraskar, Liang Pang, Yingda Dong, Ching-Huang Lu, Nan Lu | 2018-11-06 |
| 10026487 | Non-volatile memory with customized control of injection type of disturb during program verify for improved program performance | Yingda Dong | 2018-07-17 |
| 9905305 | Reducing hot electron injection type of read disturb in 3D non-volatile memory for edge word lines | Yingda Dong | 2018-02-27 |
| 9761320 | Reducing hot electron injection type of read disturb during read recovery phase in 3D memory | Ching-Huang Lu, Wei Zhao | 2017-09-12 |
| 9747992 | Non-volatile memory with customized control of injection type of disturb during read operations | Yingda Dong | 2017-08-29 |
| 9640273 | Mitigating hot electron program disturb | Yingda Dong, Wei Zhao | 2017-05-02 |
| 9412463 | Reducing hot electron injection type of read disturb in 3D non-volatile memory for edge word lines | Yingda Dong | 2016-08-09 |
| 9406391 | Method of reducing hot electron injection type of read disturb in dummy memory cells | Yingda Dong, Wei Zhao | 2016-08-02 |
| 9361993 | Method of reducing hot electron injection type of read disturb in memory | Yingda Dong, Wei Zhao, Charles See Yeung Kwong | 2016-06-07 |
| 9349478 | Read with look-back combined with programming with asymmetric boosting in memory | Jiahui Yuan, Yingda Dong, Charles See Yeung Kwong, Liang Pang | 2016-05-24 |
| 9336892 | Reducing hot electron injection type of read disturb in 3D non-volatile memory | Yingda Dong, Charles See Yeung Kwong | 2016-05-10 |
| 9324439 | Weak erase after programming to improve data retention in charge-trapping memory | Yingda Dong, Ching-Huang Lu | 2016-04-26 |
| 9286994 | Method of reducing hot electron injection type of read disturb in dummy memory cells | Yingda Dong, Wei Zhao | 2016-03-15 |
| 9286987 | Controlling pass voltages to minimize program disturb in charge-trapping memory | Yingda Dong | 2016-03-15 |
| 9165659 | Efficient reprogramming method for tightening a threshold voltage distribution in a memory device | Liang Pang, Yingda Dong | 2015-10-20 |
| 9041440 | Graphene-based frequency tripler | Joerg Appenzeller | 2015-05-26 |