Issued Patents All Time
Showing 26–50 of 107 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6188112 | High impedance load for integrated circuit devices | — | 2001-02-13 |
| 6180989 | Selectively doped electrostatic discharge layer for an integrated circuit sensor | Danielle A. Thomas | 2001-01-30 |
| RE36938 | Method of forming a landing pad structure in an integrated circuit | Tsiu C. Chan, Loi N. Nguyen | 2000-10-31 |
| 6140684 | SRAM cell structure with dielectric sidewall spacers and drain and channel regions defined along sidewall spacers | Tsiu C. Chan | 2000-10-31 |
| 6132032 | Thin-film print head for thermal ink-jet printers | John E. Turner | 2000-10-17 |
| 6093963 | Dual landing pad structure including dielectric pocket | Tsiu C. Chan, Loi N. Nguyen, Artur P. Balasinski | 2000-07-25 |
| 6091132 | Passivation for integrated circuit sensors | — | 2000-07-18 |
| 6091082 | Electrostatic discharge protection for integrated circuit sensor passivation | Danielle A. Thomas | 2000-07-18 |
| 6046483 | Planar isolation structure in an integrated circuit | Mark R. Tesauro | 2000-04-04 |
| 6034410 | MOSFET structure with planar surface | Tsiu C. Chan | 2000-03-07 |
| 5977607 | Method of forming isolated regions of oxide | Robert Louis Hodges, Fusen Chen, Che-Chia Wei | 1999-11-02 |
| 5972776 | Method of forming a planar isolation structure in an integrated circuit | — | 1999-10-26 |
| 5956615 | Method of forming a metal contact to landing pad structure in an integrated circuit | Loi N. Nguyen | 1999-09-21 |
| 5945738 | Dual landing pad structure in an integrated circuit | Loi N. Nguyen, Artur P. Balasinski | 1999-08-31 |
| 5927992 | Method of forming a dielectric in an integrated circuit | Robert Louis Hodges | 1999-07-27 |
| 5914518 | Method of forming a metal contact to landing pad structure in an integrated circuit | Loi N. Nguyen | 1999-06-22 |
| 5909636 | Method of forming a landing pad structure in an integrated circuit | Loi N. Nguyen, Artur P. Balasinski | 1999-06-01 |
| 5894160 | Method of forming a landing pad structure in an integrated circuit | Tsiu C. Chan, Loi N. Nguyen | 1999-04-13 |
| 5874769 | Mosfet isolation structure with planar surface | Tsiu C. Chan | 1999-02-23 |
| 5869388 | Method of gettering using doped SOG and a planarization technique | Tsiu C. Chan | 1999-02-09 |
| 5856233 | Method of forming a field programmable device | Fusen Chen, Girish Dixit | 1999-01-05 |
| 5834360 | Method of forming an improved planar isolation structure in an integrated circuit | Mark R. Tesauro | 1998-11-10 |
| 5825070 | Structure for transistor devices in an SRAM cell | Tsiu C. Chan | 1998-10-20 |
| 5811865 | Dielectric in an integrated circuit | Robert Louis Hodges | 1998-09-22 |
| 5759869 | Method to imporve metal step coverage by contact reflow | Fusen Chen, Girish Dixit | 1998-06-02 |