Issued Patents All Time
Showing 26–50 of 70 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8878269 | Band gap improvement in DRAM capacitors | Hanhong Chen, Wim Deweerd, Sandra G. Malhotra | 2014-11-04 |
| 8853049 | Single-sided non-noble metal electrode hybrid MIM stack for DRAM devices | Wim Deweerd, Hanhong Chen, Xiangxin Rui | 2014-10-07 |
| 8847397 | High work function, manufacturable top electrode | Sandra G. Malhotra, Hanhong Chen, Wim Deweerd, Arthur Gevondyan | 2014-09-30 |
| 8836002 | Method for fabricating a DRAM capacitor | Karthik Ramani, Hanhong Chen, Wim Deweerd, Nobumichi Fuchigami | 2014-09-16 |
| 8835273 | High temperature ALD process of metal oxide for DRAM applications | Hanhong Chen, Edward Haywood, Sandra G. Malhotra | 2014-09-16 |
| 8828836 | Method for fabricating a DRAM capacitor | Karthik Ramani, Sandra G. Malhotra | 2014-09-09 |
| 8829647 | High temperature ALD process for metal oxide for DRAM applications | Hanhong Chen, Edward Haywood, Sandra G. Malhotra | 2014-09-09 |
| 8813325 | Method for fabricating a DRAM capacitor | Karthik Ramani, Nobumichi Fuchigami, Wim Deweerd, Hanhong Chen | 2014-08-26 |
| 8815677 | Method of processing MIM capacitors to reduce leakage current | Hanhong Chen, Wim Deweerd, Xiangxin Rui, Sandra G. Malhotra | 2014-08-26 |
| 8815695 | Methods to improve leakage for ZrO2 based high K MIM capacitor | Xiangxin Rui, Mitsuhiro Horikawa, Karthik Ramani | 2014-08-26 |
| 8779607 | Devices with covering layer and filler | — | 2014-07-15 |
| 8772123 | Band gap improvement in DRAM capacitors | Hanhong Chen, Sandra G. Malhotra, Wim Deweerd | 2014-07-08 |
| 8765570 | Manufacturable high-k DRAM MIM capacitor structure | Sandra G. Malhotra, Wim Deweerd | 2014-07-01 |
| 8765569 | Molybdenum oxide top electrode for DRAM capacitors | Hanhong Chen, Wim Deweerd | 2014-07-01 |
| 8748325 | Method of manufacturing semiconductor device | Mitsuhiro Horikawa, Masashi Haruki, Shigeki Takishima, Shinichi Kihara | 2014-06-10 |
| 8722504 | Interfacial layer for DRAM capacitor | Wim Deweerd | 2014-05-13 |
| 8679939 | Manufacturable high-k DRAM MIM capacitor structure | Sandra G. Malhotra, Wim Deweerd | 2014-03-25 |
| 8652927 | Integration of non-noble DRAM electrode | Sandra G. Malhotra, Hanhong Chen, Wim Deweerd, Edward Haywood, Gerald Richardson | 2014-02-18 |
| 8647943 | Enhanced non-noble electrode layers for DRAM capacitor cell | Hanhong Chen, Wim Deweerd, Edward Haywood, Sandra G. Malhotra | 2014-02-11 |
| 8647960 | Anneal to minimize leakage current in DRAM capacitor | Wim Deweerd | 2014-02-11 |
| 8609469 | Method of manufacturing semiconductor device | Hiroaki Ikeda | 2013-12-17 |
| 8581319 | Semiconductor stacks including catalytic layers | Hanhong Chen, Sandra G. Malhotra, Xiangxin Rui | 2013-11-12 |
| 8581318 | Enhanced non-noble electrode layers for DRAM capacitor cell | Hanhong Chen, Wim Deweerd, Edward Haywood, Sandra G. Malhotra | 2013-11-12 |
| 8575671 | Asymmetric MIM capacitor for DRAM devices | Hanhong Chen | 2013-11-05 |
| 8574983 | Method for fabricating a DRAM capacitor having increased thermal and chemical stability | Karthik Ramani, Wim Deweerd | 2013-11-05 |