Issued Patents All Time
Showing 101–125 of 144 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7006719 | In-wafer testing of integrated optical components in photonic integrated circuits (PICs) | Charles H. Joyner, Mark J. Missey, Radhakrishnan L. Nagarajan, Frank Peters, Mehrdad Ziari | 2006-02-28 |
| 6985648 | Method of in-wafer testing of monolithic photonic integrated circuits (PICs) formed in a semiconductor wafer | Mark J. Missey, Radhakrishnan L. Nagarajan, Frank Peters, Richard P. Schneider, Charles H. Joyner | 2006-01-10 |
| 6946309 | III-Phosphide and III-Arsenide flip chip light-emitting devices | Michael D. Camras, Daniel A. Steigerwald, Frank M. Steranka, Michael J. Ludowise, Paul Scott Martin +2 more | 2005-09-20 |
| 6921925 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) | Sheila Mathis, Charles H. Joyner, Richard P. Schneider | 2005-07-26 |
| 6891202 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices | Sheila Mathis, Charles H. Joyner, Richard P. Schneider | 2005-05-10 |
| 6844571 | III-nitride light-emitting device with increased light generating capability | Michael R. Krames, Daniel A. Steigerwald, Pradeep Rajkomar, Jonathan J. Wierer, Jr., Tun Tan | 2005-01-18 |
| 6822017 | Method for anchoring a material in or to concrete or masonry | Michael J. Rancich, Cyndie S. Hackl | 2004-11-23 |
| 6800500 | III-nitride light emitting devices fabricated by substrate removal | Carrie Carter Coman, Michael R. Krames, Paul Scott Martin | 2004-10-05 |
| 6784463 | III-Phospide and III-Arsenide flip chip light-emitting devices | Michael D. Camras, Daniel A. Steigerwald, Frank M. Steranka, Michael J. Ludowise, Paul Scott Martin +2 more | 2004-08-31 |
| 6593160 | Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power led chip | Carrie Carter-Coman, Gloria Hofler | 2003-07-15 |
| 6570190 | LED having angled sides for increased side light extraction | Michael R. Krames, Tun Tan | 2003-05-27 |
| 6521914 | III-Nitride Light-emitting device with increased light generating capability | Michael R. Krames, Daniel Steigerwald, Pradeep Rajkomar, Jonathan J. Wierer, Jr., Tun Tan | 2003-02-18 |
| 6514782 | Method of making a III-nitride light-emitting device with increased light generating capability | Jonathan J. Wierer, Jr., Michael R. Krames, Daniel Steigerwald, Pradeep Rajkomar | 2003-02-04 |
| 6486499 | III-nitride light-emitting device with increased light generating capability | Michael R. Krames, Daniel Steigerwald, Pradeep Rajkomar, Jonathan J. Wierer, Jr., Tun Tan | 2002-11-26 |
| 6420199 | Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacks | Carrie Carter Coman, R. Scott Kern, Michael R. Krames, Arto Nurmikko, Yoon-Kyu Song | 2002-07-16 |
| 6323063 | Forming LED having angled sides for increased side light extraction | Michael R. Krames, Tun Tan | 2001-11-27 |
| 6320206 | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks | Carrie Carter Coman, R. Scott Kern, Michael R. Krames, Arto Nurmikko, Yoon-Kyu Song | 2001-11-20 |
| 6307218 | Electrode structures for light emitting devices | Daniel Steigerwald, Serge L. Rudaz, Kyle Thomas, Steven D. Lester, Paul Scott Martin +3 more | 2001-10-23 |
| 6280523 | Thickness tailoring of wafer bonded AlxGayInzN structures by laser melting | Carrie Carter Coman, R. Scott Kern, Michael R. Krames, Paul Scott Martin | 2001-08-28 |
| 6229160 | Light extraction from a semiconductor light-emitting device via chip shaping | Michael R. Krames, Tun Tan | 2001-05-08 |
| 6228207 | Alkylacrylate ester composition for anchoring materials in or to concrete or masonry | Michael J. Rancich, Cyndie S. Hackl | 2001-05-08 |
| 6222207 | Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip | Carrie Carter-Coman, Gloria Hofler | 2001-04-24 |
| 6201264 | Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials | Reena Khare | 2001-03-13 |
| 6048748 | Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials | Reena Khare | 2000-04-11 |
| 6015719 | Transparent substrate light emitting diodes with directed light output | Stephen A. Stockman | 2000-01-18 |