Issued Patents All Time
Showing 26–50 of 64 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10038051 | Vertical potential short in the periphery region of a III-nitride stack for preventing lateral leakage | Clemens Ostermaier, Oliver Häberlen | 2018-07-31 |
| 10038085 | High electron mobility transistor with carrier injection mitigation gate structure | Gilberto Curatola, Oliver Haeberlen, Clemens Ostermaier | 2018-07-31 |
| 9960157 | Bidirectional normally-off III-V high electron mobility transistor (HEMT)devices and circuits | Bernhard Zojer | 2018-05-01 |
| 9917578 | Active gate-source capacitance clamp for normally-off HEMT | Severin Kampl | 2018-03-13 |
| 9887139 | Integrated heterojunction semiconductor device and method for producing an integrated heterojunction semiconductor device | Gebhart Dippold | 2018-02-06 |
| 9847394 | Semiconductor device | Oliver Haeberlen, Clemens Ostermaier | 2017-12-19 |
| 9837520 | Group III-nitride-based enhancement mode transistor having a multi-heterojunction fin structure | Clemens Ostermaier, Oliver Häberlen | 2017-12-05 |
| 9837522 | III-nitride bidirectional device | Clemens Ostermaier, Oliver Haeberlen | 2017-12-05 |
| 9768258 | Substrate structure, semiconductor component and method | Horst Schafer, Oliver Häberlen | 2017-09-19 |
| 9728630 | High-electron-mobility transistor having a buried field plate | Clemens Ostermaier, Oliver Haeberlen | 2017-08-08 |
| 9666705 | Contact structures for compound semiconductor devices | Clemens Ostermaier, Oliver Häberlen, Gianmauro Pozzovivo | 2017-05-30 |
| 9647104 | Group III-nitride-based enhancement mode transistor having a heterojunction fin structure | Clemens Ostermaier, Oliver Haeberlen | 2017-05-09 |
| 9620467 | Electronic component | Oliver Haeberlen, Ralf Otremba, Klaus Schiess | 2017-04-11 |
| 9590048 | Electronic device | Clemens Ostermaier, Oliver Häberlen | 2017-03-07 |
| 9570565 | Field effect power transistor metalization having a comb structure with contact fingers | — | 2017-02-14 |
| 9553155 | Semiconductor device and method | Matthias Strassburg | 2017-01-24 |
| 9515162 | Surface treatment of semiconductor substrate using free radical state fluorine particles | Maria Reiner, Clemens Ostermaier, Peter Lagger, Oliver Haeberlen, Josef Schellander +2 more | 2016-12-06 |
| 9450063 | Semiconductor device and method | — | 2016-09-20 |
| 9412834 | Method of manufacturing HEMTs with an integrated Schottky diode | Clemens Ostermaier, Oliver Haeberlen | 2016-08-09 |
| 9356118 | Metalization of a field effect power transistor | — | 2016-05-31 |
| 9349829 | Method of manufacturing a multi-channel HEMT | Clemens Ostermaier, Oliver Haeberlen, Hans Peter Felsl | 2016-05-24 |
| 9337279 | Group III-nitride-based enhancement mode transistor | Clemens Ostermaier, Oliver Häberlen | 2016-05-10 |
| 9281413 | Enhancement mode device | Matthias Strassburg | 2016-03-08 |
| 9263545 | Method of manufacturing a high breakdown voltage III-nitride device | Clemens Ostermaier, Oliver Haeberlen | 2016-02-16 |
| 9142550 | High-voltage cascaded diode with HEMT and monolithically integrated semiconductor diode | Clemens Ostermaier, Oliver Häberlen | 2015-09-22 |