Issued Patents All Time
Showing 26–38 of 38 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9236290 | Method for producing a semiconductor device | Carsten Ahrens, Rudolf Berger, Manfred Frank, Uwe Hoeckele, Bernhard Knott +4 more | 2016-01-12 |
| 9224633 | Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core | Rudolf Berger, Hermann Gruber, Guenther Ruhl, Raimund Foerg, Anton Mauder +5 more | 2015-12-29 |
| 9219049 | Compound structure and method for forming a compound structure | Rudolf Berger, Guenther Ruhl, Roland Rupp | 2015-12-22 |
| 9196675 | Capacitor and method of forming a capacitor | Michael Stadtmueller, Stefan Pompl, Markus Meyer | 2015-11-24 |
| 9171728 | Method for forming a power semiconductor device | Anton Mauder, Hans-Joachim Schulze, Franz Hirler, Rudolf Berger, Klemens Pruegl +1 more | 2015-10-27 |
| 9165821 | Method for providing a self-aligned pad protection in a semiconductor device | Michael Rogalli | 2015-10-20 |
| 9012295 | Compressive polycrystalline silicon film and method of manufacture thereof | Stefan Pompl, Markus Meyer | 2015-04-21 |
| 8822306 | Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core | Rudolf Berger, Hermann Gruber, Guenther Ruhl, Raimund Foerg, Anton Mauder +5 more | 2014-09-02 |
| 8786012 | Power semiconductor device and a method for forming a semiconductor device | Anton Mauder, Franz Hirler, Rudolf Berger, Klemens Pruegl, Hans-Joachim Schulze +1 more | 2014-07-22 |
| 8685828 | Method of forming a capacitor | Michael Stadtmueller, Stefan Pompl, Markus Meyer | 2014-04-01 |
| 8404562 | Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core | Rudolf Berger, Hermann Gruber, Guenther Ruhl, Raimund Foerg, Anton Mauder +1 more | 2013-03-26 |
| 8318575 | Compressive polycrystalline silicon film and method of manufacture thereof | Stefan Pompl, Markus Meyer | 2012-11-27 |
| 7947569 | Method for producing a semiconductor including a foreign material layer | Anton Mauder, Frank Pfirsch, Rudolf Berger, Stefan Sedlmaier, Raimund Foerg | 2011-05-24 |