Yuichi Oshima — 32 Patents at Hitachi Cable

Yuichi Oshima has been granted 32 US patents while listed as an inventor at Hitachi Cable. The first was granted in 2001 and the most recent in October 2023. Yuichi Oshima ranks #110,428 of 4,157,543 US inventors in our database (top 2.7%). Patent records list Yuichi Oshima in Tsuchiura, MA, JP.

Issued Patents All Time

Showing 1–25 of 32 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
11804519	Crystalline multilayer structure, semiconductor device, and method of manufacturing crystalline structure	Katsuaki KAWARA	2023-10-31
11694894	Crystalline film containing a crystalline metal oxide and method for manufacturing the same under partial pressure	Katsuaki KAWARA	2023-07-04
10460934	Crystalline film, semiconductor device including crystalline film, and method for producing crystalline film	Shizuo Fujita, Kentaro Kaneko, Makoto Kasu, Katsuaki KAWARA, Takashi Shinohe +2 more	2019-10-29
10060047	Nitride semiconductor crystal producing method including growing nitride semiconductor crystal over seed crystal substrate	Hajime Fujikura, Taichiroo Konno	2018-08-28
9246049	Nitride-based semiconductor substrate and semiconductor device	—	2016-01-26
8975230	Method of treating ischemic injury with follistatin-like 1 polypeptide	Kenneth Walsh, Noriyuki Ouchi	2015-03-10
8829651	Nitride-based semiconductor substrate and semiconductor device	—	2014-09-09
8786052	Nitride semiconductor crystal producing method, nitride semiconductor epitaxial wafer, and nitride semiconductor freestanding substrate	Hajime Fujikura, Taichiroo Konno	2014-07-22
8715413	Method for manufacturing a group III nitride semiconductor crystal and method for manufacturing a group III nitride semiconductor substrate	—	2014-05-06
8690636	Compound semiconductor substrate production method	—	2014-04-08
8624356	Group III nitride semiconductor substrate production method, and group III nitride semiconductor substrate	—	2014-01-07
8592316	Nitride semiconductor substrate, production method therefor and nitride semiconductor device	Takehiro Yoshida	2013-11-26
8329650	Method of treating ischemic injury with follistatin-like 1 polypeptide	Kenneth Walsh, Noriyuki Ouchi	2012-12-11
8143702	Group III-V nitride based semiconductor substrate and method of making same	—	2012-03-27	$164,000
8101939	GaN single-crystal substrate and method for producing GaN single crystal	Masatomo Shibata	2012-01-24	$151,000
7906412	Method of fabricating group III nitride semiconductor single crystal, and method of fabricating group III nitride semiconductor single crystal substrate	—	2011-03-15	$130,000
7829913	Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method	Masatomo Shibata, Takeshi Eri, Akira Usui, Haruo Sunagawa	2010-11-09	$98,000
RE41805	Moisture curable composition	Yasunobu Horie, Yoshinobu Egawa, Hideharu Hashimukai, Tomokazu Wakaume, Hiroshi Aoki	2010-10-05
7791103	Group III nitride semiconductor substrate	—	2010-09-07	$79,000
7728323	Nitride-based semiconductor substrate, method of making the same and epitaxial substrate for nitride-based semiconductor light emitting device	—	2010-06-01	$69,000
7662488	Nitride-based semiconductor substrate and method of making the same	—	2010-02-16	$54,000
7589345	Nitride-based compound semiconductor substrate and method for fabricating the same	—	2009-09-15	$88,000
7348278	Method of making nitride-based compound semiconductor crystal and substrate	—	2008-03-25	$208,000
7271404	Group III-V nitride-based semiconductor substrate and method of making same	Masatomo Shibata	2007-09-18	$160,000
7196399	Epitaxially grown nitride-based compound semiconductor crystal substrate structure with low dislocation density	Akira Usui, Masatomo Shibata	2007-03-27

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Yuichi Oshima — 32 Patents

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