Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Group III-V nitride-based semiconductor substrate and method of making same

Group III-V nitride-based semiconductor substrate and method of making same

US Patent 7271404 · Granted Sep 18, 2007

Estimated economic value: $160,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Gallium nitride single crystal substrate2025
Crystalline multilayer structure, semiconductor device, and method of manufactur2023
Group III nitride crystal substrate having a diameter of 4 inches or more and a 2023
Crystalline film containing a crystalline metal oxide and method for manufacturi2023
Gallium nitride laminated substrate and semiconductor device2021
Nitride semiconductor substrate, semiconductor laminate, laminated structure, me2021
Nitride crystal substrate2020
Crystalline film, semiconductor device including crystalline film, and method fo2019
Method for manufacturing group-III nitride semiconductor crystal substrate2019
Method for manufacturing group-III nitride substrate and group-III nitride subst2019
Method for producing group-III nitride crystal, group-III nitride crystal, semic2019
Method for manufacturing nitride crystal substrate and substrate for crystal gro2019