Issued Patents All Time
Showing 51–75 of 97 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10629692 | Tunable breakdown voltage RF FET devices | Vibhor Jain, Qizhi Liu | 2020-04-21 |
| 10509244 | Optical switches and routers operated by phase-changing materials controlled by heaters | Steven M. Shank, Anthony K. Stamper, John J. Ellis-Monaghan, Vibhor Jain | 2019-12-17 |
| 10469041 | Gallium nitride (GaN) power amplifiers (PA) with angled electrodes and 100 CMOS and method for producing the same | Anthony K. Stamper, Vibhor Jain, Humberto Campanella Pineda | 2019-11-05 |
| 10388728 | Structures with an airgap and methods of forming such structures | Michael J. Zierak, Anthony K. Stamper, Vibhor Jain | 2019-08-20 |
| 10367083 | Compact device structures for a bipolar junction transistor | Vibhor Jain, Renata Camillo-Castillo, Qizhi Liu, Alvin J. Joseph, Peter B. Gray | 2019-07-30 |
| 10170553 | Shaped terminals for a bipolar junction transistor | Renata Camillo-Castillo, Qizhi Liu | 2019-01-01 |
| 10115810 | Heterojunction bipolar transistor with a thickened extrinsic base | Qizhi Liu, Vibhor Jain | 2018-10-30 |
| 10109716 | Turnable breakdown voltage RF FET devices | Vibhor Jain, Qizhi Liu | 2018-10-23 |
| 10090391 | Tunable breakdown voltage RF FET devices | Vibhor Jain, Qizhi Liu | 2018-10-02 |
| 10079248 | Field-effect transistors with a buried body contact | Steven M. Shank, Mark D. Jaffe | 2018-09-18 |
| 10038063 | Tunable breakdown voltage RF FET devices | Vibhor Jain, Qizhi Liu | 2018-07-31 |
| 9847415 | Field effect transistor and method of manufacture | Alan B. Botula, Alvin J. Joseph, Stephen E. Luce, Yun Shi | 2017-12-19 |
| 9496377 | Self-aligned emitter-base-collector bipolar junction transistors with a single crystal raised extrinsic base | Renata Camillo-Castillo, Peng Cheng, Vibhor Jain, Qizhi Liu | 2016-11-15 |
| 9356014 | High-voltage metal-insulator-semiconductor field effect transistor structures | William F. Clark, Jr., Qizhi Liu, Yun Shi, Yanli Zhang | 2016-05-31 |
| 9343589 | Field effect transistor (FET) with self-aligned double gates on bulk silicon substrate, methods of forming, and related design structures | James W. Adkisson, James S. Dunn, Blaine J. Gross, David L. Harame, Qizhi Liu | 2016-05-17 |
| 9312370 | Bipolar transistor with extrinsic base region and methods of fabrication | James W. Adkisson, David L. Harame, Michael L. Kerbaugh, Qizhi Liu | 2016-04-12 |
| 9240448 | Bipolar junction transistors with reduced base-collector junction capacitance | James W. Adkisson, James R. Elliott, David L. Harame, Marwan H. Khater, Robert K. Leidy +1 more | 2016-01-19 |
| 9236499 | Junction field-effect transistor with raised source and drain regions formed by selective epitaxy | Kevin K. Chan, John J. Ellis-Monaghan, David L. Harame, Qizhi Liu | 2016-01-12 |
| 9202900 | Method to bridge extrinsic and intrinsic base by selective epitaxy in BiCMOS technology | James W. Adkisson, Kevin K. Chan, David L. Harame, Qizhi Liu | 2015-12-01 |
| 9159801 | Bipolar junction transistor with multiple emitter fingers | Renata Camillo-Castillo, David L. Harame, Qizhi Liu, Ramana Malladi | 2015-10-13 |
| 9111986 | Self-aligned emitter-base-collector bipolar junction transistors with a single crystal raised extrinsic base | Renata Camillo-Castillo, Peng Cheng, Vibhor Jain, Qizhi Liu | 2015-08-18 |
| 9093491 | Bipolar junction transistors with reduced base-collector junction capacitance | James W. Adkisson, James R. Elliott, David L. Harame, Marwan H. Khater, Robert K. Leidy +1 more | 2015-07-28 |
| 9029229 | Semiconductor device and method of forming the device by forming monocrystalline semiconductor layers on a dielectric layer over isolation regions | James W. Adkisson, Peng Cheng, Vibhor Jain, Vikas K. Kaushal, Qizhi Liu | 2015-05-12 |
| 8927357 | Junction field-effect transistor with raised source and drain regions formed by selective epitaxy | Kevin K. Chan, John J. Ellis-Monaghan, David L. Harame, Qizhi Liu | 2015-01-06 |
| 8927379 | Method to bridge extrinsic and intrinsic base by selective epitaxy in BiCMOS technology | James W. Adkisson, Kevin K. Chan, David L. Harame, Qizhi Liu | 2015-01-06 |