Issued Patents All Time
Showing 51–69 of 69 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8288186 | Substrate for growing a III-V light emitting device | Michael R. Krames, John E. Epler | 2012-10-16 |
| 8183577 | Controlling pit formation in a III-nitride device | Sungsoo Yi, Qi Ye | 2012-05-22 |
| 8163575 | Grown photonic crystals in semiconductor light emitting devices | Jonathan J. Wierer, Jr., Michael R. Krames | 2012-04-24 |
| 8154052 | Light emitting device grown on wavelength converting substrate | Aurelien J. F. David, Oleg Borisovich Shchekin | 2012-04-10 |
| 8105852 | Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate | Michael R. Krames, Melvin McLaurin, Sungsoo Yi | 2012-01-31 |
| 7981767 | Methods for relaxation and transfer of strained layers and structures fabricated thereby | Pascal Guenard, Bruce Faure, Fabrice Letertre, Michael R. Krames, Melvin McLaurin | 2011-07-19 |
| 7951693 | III-nitride light emitting devices grown on templates to reduce strain | Patrick N. Grillot, Werner Goetz, Linda Romano | 2011-05-31 |
| 7880186 | III-nitride light emitting device with double heterostructure light emitting region | Gangyi Chen, Werner Goetz, Michael R. Krames, Gerd O. Mueller, Yu-Chen Shen +1 more | 2011-02-01 |
| 7863631 | A1InGaP LED having reduced temperature dependence | Michael R. Krames, Frank M. Steranka | 2011-01-04 |
| 7808011 | Semiconductor light emitting devices including in-plane light emitting layers | James C. Kim, John E. Epler, Michael R. Krames, Jonathan J. Wierer, Jr. | 2010-10-05 |
| 7663148 | III-nitride light emitting device with reduced strain light emitting layer | Sungsoo Yi, Aurelien J. F. David, Michael R. Krames, Linda Romano | 2010-02-16 |
| 7547908 | III-nitride light emitting devices grown on templates to reduce strain | Patrick N. Grillot, Werner Goetz, Linda Romano | 2009-06-16 |
| 7544525 | AllnGaP LED having reduced temperature dependence | Michael R. Krames, Frank M. Steranka | 2009-06-09 |
| 7534638 | III-nitride light emitting devices grown on templates to reduce strain | Patrick N. Grillot, Werner Goetz, Linda Romano | 2009-05-19 |
| 7244630 | A1InGaP LED having reduced temperature dependence | Michael R. Krames, Frank M. Steranka | 2007-07-17 |
| 7221000 | Reverse polarization light emitting region for a semiconductor light emitting device | Yu-Chen Shen, Michael R. Krames | 2007-05-22 |
| 7122839 | Semiconductor light emitting devices with graded composition light emitting layers | Yu-Chen Shen, Michael R. Krames | 2006-10-17 |
| 7087941 | lll-phosphide light emitting devices with thin active layers | Fred A. Kish, Jr., Herman C. Chui, Stephen A. Stockman, Michael R. Krames, Gloria Hofler +3 more | 2006-08-08 |
| 6995389 | Heterostructures for III-nitride light emitting devices | James C. Kim, Michael R. Krames, Yu-Chen Shen, Troy Trottier, Jonathan J. Wierer, Jr. | 2006-02-07 |