Issued Patents All Time
Showing 26–50 of 69 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| D825607 | Display screen with a graphical user interface | Matthew B. Chadbourne, Rachel Wolthuis | 2018-08-14 |
| 10038115 | Nanowire sized opto-electronic structure and method for modifying selected portions of same | Carl Patrik Theodor Svensson | 2018-07-31 |
| 10026866 | III-nitride nanowire LED with strain modified surface active region and method of making thereof | Linda Romano, Sungsoo Yi, Patrik Svensson | 2018-07-17 |
| 9991414 | Method of forming a composite substrate | Melvin McLaurin, Michael Jason Grundmann, Werner Goetz, John E. Epler, Qi Ye | 2018-06-05 |
| D819679 | Display screen with a graphical user interface | Matthew B. Chadbourne, Rachel Wolthuis | 2018-06-05 |
| 9917232 | Monolithic image chip for near-to-eye display | Martin F. Schubert, Daniel Bryce Thompson, Michael Jason Grundmann | 2018-03-13 |
| 9911896 | Semiconductor light emitting device growing active layer on textured surface | Sungsoo Yi, Michael R. Krames, Linda Romano | 2018-03-06 |
| 9761757 | III-nitride nanowire LED with strain modified surface active region and method of making thereof | Linda Romano, Sungsoo Yi, Patrik Svensson | 2017-09-12 |
| 9722135 | Nanowire sized opto-electronic structure and method for modifying selected portions of same | Carl Patrik Theodor Svensson | 2017-08-01 |
| 9711687 | Light emitting device with improved extraction efficiency | Werner Goetz, Michael Jason Grundmann, Melvin McLaurin, John E. Epler, Michael D. Camras +1 more | 2017-07-18 |
| 9640724 | III-nitride light emitting device with double heterostructure light emitting region | Yu-Chen Shen, Satoshi Watanabe, Michael R. Krames, Gerd O. Mueller | 2017-05-02 |
| 9634181 | Method of forming a composite substrate | Melvin McLaurin, Michael Jason Grundmann, Werner Goetz, John E. Epler, Qi Ye | 2017-04-25 |
| 9620559 | Monolithic image chip for near-to-eye display | Martin F. Schubert, Daniel Bryce Thompson, Michael Jason Grundmann | 2017-04-11 |
| 9444007 | Nanopyramid sized opto-electronic structure and method for manufacturing of same | Olga Kryliouk, Giuliano Portilho Vescovi | 2016-09-13 |
| 9281442 | III-nitride nanowire LED with strain modified surface active region and method of making thereof | Linda Romano, Sungsoo Yi, Patrik Svensson | 2016-03-08 |
| 9209359 | Light emitting device with improved extraction efficiency | Werner Goetz, Michael Jason Grundmann, Melvin McLaurin, John E. Epler, Michael D. Camras +1 more | 2015-12-08 |
| 9166106 | Nanowire sized opto-electronic structure and method for modifying selected portions of same | Carl Patrik Theodor Svensson | 2015-10-20 |
| 9012250 | Controlling pit formation in a III-nitride device | Sungsoo Yi, Qi Ye | 2015-04-21 |
| 9000450 | Grown photonic crystals in semiconductor light emitting devices | Jonathan J. Wierer, Jr., Michael R. Krames | 2015-04-07 |
| 8921141 | Nanopyramid sized opto-electronic structure and method for manufacturing of same | Olga Kryliouk, Giuliano Portilho Vescovi | 2014-12-30 |
| 8847252 | III-nitride light emitting device with double heterostructure light emitting region | Yu-Chen Shen, Satoshi Watanabe, Michael R. Krames, Gerd O. Mueller | 2014-09-30 |
| 8492244 | Methods for relaxation and transfer of strained layers and structures fabricated thereby | Pascal Guenard, Bruce Faure, Fabrice Letertre, Michael R. Krames, Melvin McLaurin | 2013-07-23 |
| 8486771 | Methods of forming relaxed layers of semiconductor materials, semiconductor structures, devices and engineered substrates including same | Fabrice Letertre, Bruce Faure, Michael R. Krames | 2013-07-16 |
| 8481408 | Relaxation of strained layers | Fabrice Letertre, Carlos Mazure, Michael R. Krames, Melvin McLaurin | 2013-07-09 |
| 8334155 | Substrate for growing a III-V light emitting device | Michael R. Krames, John E. Epler | 2012-12-18 |