Issued Patents All Time
Showing 26–50 of 61 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7071490 | Group III nitride LED with silicon carbide substrate | John Edmond, Kathleen Marie Doverspike, Michael John Bergmann | 2006-07-04 |
| 7034328 | Vertical geometry InGaN LED | Kathleen Marie Doverspike, John Edmond, Heidi Marie Dieringer, David B. Slater, Jr. | 2006-04-25 |
| 6987281 | Group III nitride contact structures for light emitting devices | John Edmond, Kathleen Marie Doverspike, Michael John Bergmann | 2006-01-17 |
| 6955977 | Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures | John Edmond, Kevin Haberern, David T. Emerson | 2005-10-18 |
| 6952024 | Group III nitride LED with silicon carbide cladding layer | John Edmond, Kathleen Marie Doverspike, Michael John Bergmann | 2005-10-04 |
| 6906352 | Group III nitride LED with undoped cladding layer and multiple quantum well | John Edmond, Kathleen Marie Doverspike, Michael John Bergmann, David T. Emerson | 2005-06-14 |
| 6812053 | Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures | John Edmond, Kevin Haberern, David T. Emerson | 2004-11-02 |
| 6803602 | Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures | John Edmond, Kevin Haberern, David T. Emerson | 2004-10-12 |
| 6800876 | Group III nitride LED with undoped cladding layer (5000.137) | John Edmond, Kathleen Marie Doverspike, Michael John Bergmann | 2004-10-05 |
| 6784461 | Group III nitride light emitting devices with progressively graded layers | John Edmond, Kathleen Marie Doverspike, Michael John Bergmann | 2004-08-31 |
| 6764932 | Single step pendeo- and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures | John Edmond, Kevin Haberern, David T. Emerson | 2004-07-20 |
| 6717185 | Light emitting devices with Group III nitride contact layer and superlattice | John Edmond, Kathleen Marie Doverspike, Michael John Bergmann | 2004-04-06 |
| 6630690 | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure | John Edmond, Kathleen Marie Doverspike, Michelle Turner Leonard | 2003-10-07 |
| 6610551 | Vertical geometry InGaN LED | Kathleen Marie Doverspike, John Edmond, Heidi Marie Dieringer, David B. Slater, Jr. | 2003-08-26 |
| 6582986 | Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures | John Edmond, Kevin Haberern, David T. Emerson | 2003-06-24 |
| 6534797 | Group III nitride light emitting devices with gallium-free layers | John Edmond, Kathleen Marie Doverspike, Michael John Bergmann | 2003-03-18 |
| 6530990 | Susceptor designs for silicon carbide thin films | Calvin H. Carter, Jr., Joseph Sumakeris | 2003-03-11 |
| 6492193 | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure | John Edmond, Kathleen Marie Doverspike, Michelle Turner Leonard | 2002-12-10 |
| 6459100 | Vertical geometry ingan LED | Kathleen Marie Doverspike, John Edmond, Heidi Marie Dieringer, David B. Slater, Jr. | 2002-10-01 |
| 6373077 | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure | John Edmond, Kathleen Marie Doverspike, Michelle Turner Leonard | 2002-04-16 |
| 6217662 | Susceptor designs for silicon carbide thin films | Calvin H. Carter, Jr., Joseph Sumakeris | 2001-04-17 |
| 6201262 | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure | John Edmond, Kathleen Marie Doverspike, Michelle Turner Leonard | 2001-03-13 |
| 6187606 | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure | John Edmond, Kathleen Marie Doverspike, Michelle Turner Leonard | 2001-02-13 |
| 6120600 | Double heterojunction light emitting diode with gallium nitride active layer | John Edmond | 2000-09-19 |
| 5838706 | Low-strain laser structures with group III nitride active layers | John Edmond, Gary E. Bulman | 1998-11-17 |