Issued Patents All Time
Showing 51–61 of 61 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5739554 | Double heterojunction light emitting diode with gallium nitride active layer | John Edmond | 1998-04-14 |
| 5592501 | Low-strain laser structures with group III nitride active layers | John Edmond, Gary E. Bulman | 1997-01-07 |
| 5523589 | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime | John Edmond, Gary E. Bulman, Vladimir A. Dmitriev | 1996-06-04 |
| 5416342 | Blue light-emitting diode with high external quantum efficiency | John Edmond | 1995-05-16 |
| 5338944 | Blue light-emitting diode with degenerate junction structure | John Edmond, Vladimir A. Dmitriev, Gary E. Bulman | 1994-08-16 |
| 5200022 | Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product | Calvin H. Carter, Jr. | 1993-04-06 |
| 5119540 | Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product | Thomas G. Coleman, Calvin H. Carter, Jr. | 1992-06-09 |
| 5011549 | Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon | Jeffrey T. Glass, Robert F. Davis | 1991-04-30 |
| 4946547 | Method of preparing silicon carbide surfaces for crystal growth | John Williams Palmour, John Edmond | 1990-08-07 |
| 4912063 | Growth of beta-sic thin films and semiconductor devices fabricated thereon | Robert F. Davis, Jeffrey T. Glass, Calvin H. Carter, Jr. | 1990-03-27 |
| 4912064 | Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon | Jeffrey T. Glass, Robert F. Davis | 1990-03-27 |