Issued Patents All Time
Showing 26–50 of 55 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7915152 | III-V nitride substrate boule and method of making and using the same | Robert P. Vaudo, Jeffrey S. Flynn, Joan M. Redwing, Michael A. Tischler | 2011-03-29 |
| 7884447 | Laser diode orientation on mis-cut substrates | Robert P. Vaudo, Xueping Xu | 2011-02-08 |
| 7795707 | High voltage switching devices and process for forming same | Jeffrey S. Flynn, Robert P. Vaudo | 2010-09-14 |
| 7769066 | Laser diode and method for fabricating same | Arpan Chakraborty, Monica Hansen, Steven P. DenBaars, Shuji Nakamura | 2010-08-03 |
| 7700203 | Vicinal gallium nitride substrate for high quality homoepitaxy | Xueping Xu, Robert P. Vaudo, Jeffrey S. Flynn | 2010-04-20 |
| 7682944 | Pendeo epitaxial structures and devices | Arpan Chakraborty, Shuji Nakamura, Monica Hansen, Steven P. DenBaars | 2010-03-23 |
| 7655197 | III-V nitride substrate boule and method of making and using the same | Robert P. Vaudo, Jeffrey S. Flynn, Joan M. Redwing, Michael A. Tischler | 2010-02-02 |
| 7564180 | Light emission device and method utilizing multiple emitters and multiple phosphors | — | 2009-07-21 |
| 7390581 | Vicinal gallium nitride substrate for high quality homoepitaxy | Xueping Xu, Robert P. Vaudo, Jeffrey S. Flynn | 2008-06-24 |
| 7282744 | III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier | Jeffrey S. Flynn, Huoping Xin | 2007-10-16 |
| 7170095 | Semi-insulating GaN and method of making the same | Robert P. Vaudo, Xueping Xu | 2007-01-30 |
| 7118813 | Vicinal gallium nitride substrate for high quality homoepitaxy | Xueping Xu, Robert P. Vaudo, Jeffrey S. Flynn | 2006-10-10 |
| 6958093 | Free-standing (Al, Ga, In)N and parting method for forming same | Robert P. Vaudo, Michael A. Tischler, Michael Kelly | 2005-10-25 |
| 6680489 | Amorphous silicon carbide thin film coating | Chris S. Christos, Xueping Xu | 2004-01-20 |
| 6641938 | Silicon carbide epitaxial layers grown on substrates offcut towards <1100> | Barbara E. Landini, Michael A. Tischler | 2003-11-04 |
| 6596079 | III-V nitride substrate boule and method of making and using the same | Robert P. Vaudo, Jeffrey S. Flynn, Joan M. Redwing, Michael A. Tischler | 2003-07-22 |
| 6500238 | Fluid storage and dispensing system | Thomas H. Baum, Michael A. Tischler | 2002-12-31 |
| 6447604 | METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((AL,IN,GA)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES | Jeffrey S. Flynn, Robert P. Vaudo, David Keogh, Xueping Xu, Barbara E. Landini | 2002-09-10 |
| 6445006 | Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same | Xueping Xu | 2002-09-03 |
| 6379210 | Fabrication of electron emitters coated with material such as carbon | Xueping Xu, Christopher J. Spindt, Colin D. Stanners, John M. Macaulay | 2002-04-30 |
| 6356014 | Electron emitters coated with carbon containing layer | Xueping Xu, Christopher J. Spindt, Colin D. Stanners, John M. Macaulay | 2002-03-12 |
| 6329088 | Silicon carbide epitaxial layers grown on substrates offcut towards <1100> | Barbara E. Landini, Michael A. Tischler | 2001-12-11 |
| 6268229 | Integrated circuit devices and methods employing amorphous silicon carbide resistor materials | Charles Pershing Beetz, Xueping Xu, Swayambu Ramani, Ronald S. Besser | 2001-07-31 |
| 6125131 | Laser system utilizing sorbent-based gas storage and delivery system | Glenn M. Tom, James V. McManus | 2000-09-26 |
| 6031250 | Integrated circuit devices and methods employing amorphous silicon carbide resistor materials | Charles Pershing Beetz, Xueping Xu, Swayambu Ramani, Ronald S. Besser | 2000-02-29 |