Issued Patents All Time
Showing 26–50 of 67 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8502235 | Integrated nitride and silicon carbide-based devices | Scott Sheppard, Thomas J. Smith | 2013-08-06 |
| 8481376 | Group III nitride semiconductor devices with silicon nitride layers and methods of manufacturing such devices | Scott Sheppard | 2013-07-09 |
| 8362503 | Thick nitride semiconductor structures with interlayer structures | Albert Augustus Burk, Jr. | 2013-01-29 |
| 8324005 | Methods of fabricating nitride semiconductor structures with interlayer structures | Albert Augustus Burk, Jr. | 2012-12-04 |
| 8212289 | Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions | Richard Peter Smith, Scott Sheppard, Yifeng Wu | 2012-07-03 |
| 8153515 | Methods of fabricating strain balanced nitride heterojunction transistors | — | 2012-04-10 |
| 8034647 | LED with substrate modifications for enhanced light extraction and method of making same | Max Batres, James Ibbetson, Ting Li | 2011-10-11 |
| 7901994 | Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers | Scott Sheppard | 2011-03-08 |
| 7875910 | Integrated nitride and silicon carbide-based devices | Scott Sheppard, Thomas J. Smith | 2011-01-25 |
| 7863624 | Silicon carbide on diamond substrates and related devices and methods | — | 2011-01-04 |
| 7825432 | Nitride semiconductor structures with interlayer structures | Albert Augustus Burk, Jr. | 2010-11-02 |
| 7759682 | LED with substrate modifications for enhanced light extraction and method of making same | — | 2010-07-20 |
| 7709859 | Cap layers including aluminum nitride for nitride-based transistors | Richard Peter Smith, Scott Sheppard | 2010-05-04 |
| 7662682 | Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates | Edward Lloyd Hutchins | 2010-02-16 |
| 7646024 | Structure and method for reducing forward voltage across a silicon carbide-group III nitride interface | — | 2010-01-12 |
| 7626217 | Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices | — | 2009-12-01 |
| 7615774 | Aluminum free group III-nitride based high electron mobility transistors | — | 2009-11-10 |
| 7612390 | Heterojunction transistors including energy barriers | Yifeng Wu, Primit Parikh | 2009-11-03 |
| 7579626 | Silicon carbide layer on diamond substrate for supporting group III nitride heterostructure device | — | 2009-08-25 |
| 7550784 | Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses | Richard Peter Smith, Scott Sheppard | 2009-06-23 |
| 7544963 | Binary group III-nitride based high electron mobility transistors | — | 2009-06-09 |
| 7479669 | Current aperture transistors and methods of fabricating same | — | 2009-01-20 |
| 7465967 | Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions | Richard Peter Smith, Scott Sheppard, Yifeng Wu | 2008-12-16 |
| 7456443 | Transistors having buried n-type and p-type regions beneath the source region | Scott Sheppard, Richard Peter Smith | 2008-11-25 |
| 7449353 | Co-doping for fermi level control in semi-insulating Group III nitrides | — | 2008-11-11 |