Issued Patents All Time
Showing 26–50 of 60 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5676765 | Pin junction photovoltaic device having a multi-layered I-type semiconductor layer with a specific non-single crystal I-type layer formed by a microwave plasma CVD process | Koichi Matsuda, Hiroshi Shimoda, Yusuke Miyamoto | 1997-10-14 |
| 5656098 | Photovoltaic conversion device and method for producing same | Nobuyuki Ishikawa, Soichiro Kawakami, Jinsho Matsuyama, Toshimitsu Kariya, Yuzo Kouda +1 more | 1997-08-12 |
| 5599403 | Semiconductor device containing microcrystalline germanium & method for producing the same | Toshimitsu Kariya | 1997-02-04 |
| 5563425 | Photoelectrical conversion device and generating system using the same | Tatsuyuki Aoike, Masafumi Sano, Mitsuyuki Niwa, Ryo Hayashi, Masahiko Tonogaki | 1996-10-08 |
| 5563075 | Forming a non-monocrystalline silicone semiconductor having pin junction including laminated intrinsic layers | Tatsuyuki Aoike, Masafumi Sano, Mitsuyuki Niwa, Ryo Hayashi, Masahiko Tonogaki | 1996-10-08 |
| 5510631 | Non-monocrystalline silicon carbide semiconductor and semiconductor device employing the same | Tatsuyuki Aoike, Toshimitsu Kariya, Yuzo Koda | 1996-04-23 |
| 5456762 | Photoelectric conversion elements | Toshimitsu Kariya | 1995-10-10 |
| 5439533 | Photovoltaic device, method of producing the same and generating system using the same | Jinsho Matsuyama, Toshimitsu Kariya, Koichi Matsuda, Yuzo Koda, Naoto Okada | 1995-08-08 |
| 5429685 | Photoelectric conversion element and power generation system using the same | Tatsuyuki Aoike, Masafumi Sano, Mitsuyuki Niwa, Ryo Hayashi, Masahiko Tonogaki | 1995-07-04 |
| 5421909 | Photovoltaic conversion device | Nobuyuki Ishikawa, Soichiro Kawakami, Jinsho Matsuyama, Toshimitsu Kariya, Yuzo Kouda +1 more | 1995-06-06 |
| 5418680 | Apparatus for repairing an electrically short-circuited semiconductor device | Tatsuyuki Aoike, Mitsuyuki Niwa, Toshimitsu Kariya, Yuzo Koda | 1995-05-23 |
| 5401330 | Photovoltaic element | Toshimitsu Kariya, Koichi Matsuda, Naoto Okada, Yutaka Nishio, Tomonori Nishimoto +1 more | 1995-03-28 |
| 5371380 | Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1.times.10.sup.(19) (cm.sup.-3) or less | Tatsuyuki Aoike, Mitsuyuki Niwa, Toshimitsu Kariya, Yuzo Koda | 1994-12-06 |
| 5362684 | Non-monocrystalline silicon carbide semiconductor, process of production thereof, and semiconductor device employing the same | Tatsuyuki Aoike, Toshimitsu Kariya, Yuzo Koda | 1994-11-08 |
| 5342452 | Photovoltaic device | Tatsuyuki Aoike | 1994-08-30 |
| 5284525 | Solar cell | Tatsuyuki Aoike, Yasushi Fujioka, Mitsuyuki Niwa, Toshimitsu Kariya, Yuzo Kohda | 1994-02-08 |
| 5281541 | Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method | Tatsuyuki Aoike, Mitsuyuki Niwa, Toshimitsu Kariya, Yuzo Koda | 1994-01-25 |
| 5233664 | Speaker system and method of controlling directivity thereof | Hirofumi Yanagawa, Sumio Hagiwara | 1993-08-03 |
| 5093704 | Semiconductor device having a semiconductor region in which a band gap being continuously graded | Yasushi Fujioka | 1992-03-03 |
| 4940642 | Electrophotographic light receiving member having polycrystalline silicon charge injection inhibition layer prepared by chemical reaction of excited precursors and A-SI:C:H surface layer | Shigeru Shirai, Takayoshi Arai, Minoru Kato, Yasushi Fujioka | 1990-07-10 |
| 4898798 | Photosensitive member having a light receiving layer comprising a carbonic film for use in electrophotography | Masao Sugata, Tohru Den, Susumu Ito, Keiji Hirabayashi, Keiko Ikoma +6 more | 1990-02-06 |
| 4892800 | Photosensitive member having a photoconductive layer comprising a carbonic film for use in electrophotography | Masao Sugata, Tatsuo Takeuchi, Hiroshi Satomura, Yoshihiro Oguchi, Akio Maruyama +6 more | 1990-01-09 |
| 4887134 | Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded | Yasushi Fujioka | 1989-12-12 |
| 4845001 | Light receiving member for use in electrophotography with a surface layer comprising non-single-crystal material containing tetrahedrally bonded boron nitride | Tetsuya Takei, Tatsuyuki Aoike, Yasushi Fujioka | 1989-07-04 |
| 4824749 | Light receiving member for use in electrophotography and process for the production thereof | Shigeru Shirai, Takayoshi Arai, Minoru Kato, Yasushi Fujioka | 1989-04-25 |