Issued Patents All Time
Showing 26–36 of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8999856 | Methods for etch of sin films | Anchuan Wang, Nitin K. Ingle | 2015-04-07 |
| 8921234 | Selective titanium nitride etching | Jie Liu, Anchuan Wang, Nitin K. Ingle, Seung Ho Park, Zhijun Chen +1 more | 2014-12-30 |
| 8808563 | Selective etch of silicon by way of metastable hydrogen termination | Anchuan Wang, Nitin K. Ingle, Young S. Lee | 2014-08-19 |
| 8801952 | Conformal oxide dry etch | Anchuan Wang, Nitin K. Ingle, Young S. Lee | 2014-08-12 |
| 8771536 | Dry-etch for silicon-and-carbon-containing films | Anchuan Wang, Nitin K. Ingle, Yunyu Wang, Young S. Lee | 2014-07-08 |
| 8771539 | Remotely-excited fluorine and water vapor etch | Anchuan Wang, Nitin K. Ingle | 2014-07-08 |
| 8765574 | Dry etch process | Nitin K. Ingle, Anchuan Wang | 2014-07-01 |
| 8679983 | Selective suppression of dry-etch rate of materials containing both silicon and nitrogen | Yunyu Wang, Anchuan Wang, Nitin K. Ingle, Young S. Lee | 2014-03-25 |
| 8679982 | Selective suppression of dry-etch rate of materials containing both silicon and oxygen | Yunyu Wang, Anchuan Wang, Nitin K. Ingle, Young S. Lee | 2014-03-25 |
| 8642481 | Dry-etch for silicon-and-nitrogen-containing films | Yunyu Wang, Anchuan Wang, Nitin K. Ingle, Young S. Lee | 2014-02-04 |
| 8541312 | Selective suppression of dry-etch rate of materials containing both silicon and nitrogen | Yunyu Wang, Anchuan Wang, Nitin K. Ingle, Young S. Lee | 2013-09-24 |