Issued Patents All Time
Showing 26–45 of 45 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5759360 | Wafer clean sputtering process | Kenny King-Tai Ngan | 1998-06-02 |
| 5754297 | Method and apparatus for monitoring the deposition rate of films during physical vapor deposition | — | 1998-05-19 |
| 5747360 | Method of metalizing a semiconductor wafer | — | 1998-05-05 |
| 5698989 | Film sheet resistance measurement | — | 1997-12-16 |
| 5521120 | Method for the formation of tin barrier layer with preferential (111) crystallographic orientation | Kenny King-Tai Ngan | 1996-05-28 |
| 5460703 | Low thermal expansion clamping mechanism | Robert E. Davenport | 1995-10-24 |
| 5460689 | High pressure plasma treatment method and apparatus | Ivo Raaijmakers | 1995-10-24 |
| 5443995 | Method for metallizing a semiconductor wafer | — | 1995-08-22 |
| 5434044 | Method for the formation of tin barrier layer with preferential (111) crystallographic orientation | Kenny King-Tai Ngan | 1995-07-18 |
| 5360996 | Titanium nitride/titanium silicide multiple layer barrier with preferential (111) crystallographic orientation on titanium nitride surface | Kenny King-Tai Ngan | 1994-11-01 |
| 5356835 | Method for forming low resistance and low defect density tungsten contacts to silicon semiconductor wafer | Sasson Somekh, Mei Chang | 1994-10-18 |
| 5288665 | Process for forming low resistance aluminum plug in via electrically connected to overlying patterned metal layer for integrated circuit structures | — | 1994-02-22 |
| 5250467 | Method for forming low resistance and low defect density tungsten contacts to silicon semiconductor wafer | Sasson Somekh, Mei Chang | 1993-10-05 |
| 5242860 | Method for the formation of tin barrier layer with preferential (111) crystallographic orientation | Kenny King-Tai Ngan | 1993-09-07 |
| 5236868 | Formation of titanium nitride on semiconductor wafer by reaction of titanium with nitrogen-bearing gas in an integrated processing system | — | 1993-08-17 |
| 5098198 | Wafer heating and monitor module and method of operation | Dan Maydan | 1992-03-24 |
| 5043300 | Single anneal step process for forming titanium silicide on semiconductor wafer | — | 1991-08-27 |
| 4989991 | Emissivity calibration apparatus and method | Michel Pecot | 1991-02-05 |
| 4919542 | Emissivity correction apparatus and method | Nick Bacile, Wendell T. Blonigan | 1990-04-24 |
| 4854727 | Emissivity calibration apparatus and method | Michel Pecot | 1989-08-08 |