| 6767794 |
Method of making ultra thin oxide formation using selective etchback technique integrated with thin nitride layer for high performance MOSFET |
Mark I. Gardner, Michael Allen |
2004-07-27 |
| 6743688 |
High performance MOSFET with modulated channel gate thickness |
Mark I. Gardner, Charles E. May |
2004-06-01 |
| 6258675 |
High K gate electrode |
Mark I. Gardner |
2001-07-10 |
| 6207485 |
Integration of high K spacers for dual gate oxide channel fabrication technique |
Mark I. Gardner, Charles E. May |
2001-03-27 |
| 6127235 |
Method for making asymmetrical gate oxide thickness in channel MOSFET region |
Mark I. Gardner, Charles E. May |
2000-10-03 |
| 6124175 |
Rapid thermal anneal with a gaseous dopant species |
Mark I. Gardner |
2000-09-26 |
| 6060733 |
Formation of lightly doped regions under a gate having a reduced gate oxide |
Mark I. Gardner |
2000-05-09 |
| 6054374 |
Method of scaling dielectric thickness in a semiconductor process with ion implantation |
Mark I. Gardner |
2000-04-25 |
| 6040602 |
Formation of lightly doped regions under a gate |
Mark I. Gardner |
2000-03-21 |
| 5977600 |
Formation of shortage protection region |
Derick J. Wristers, Jon D. Cheek |
1999-11-02 |