Issued Patents 2025
Showing 1–25 of 29 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12432990 | Epitaxial source/drain feature with enlarged lower section interfacing with backside via | Feng-Ching Chu, Wei-Yang Lee | 2025-09-30 |
| 12426297 | Method and structure for air gap inner spacer in gate-all-around devices | Shih-Chiang Chen, Wei-Yang Lee, Yuan-Ching Peng | 2025-09-23 |
| 12408377 | Semiconductor device structure with backside contact | Feng-Ching Chu, Wei-Yang Lee | 2025-09-02 |
| 12402364 | Semiconductor device structure and method for forming the same | Kuan-Hao Cheng, Wei-Yang Lee, Tzu-Hua Chiu, Wei-Han Fan, Po-Yu Lin | 2025-08-26 |
| 12402354 | Epitaxial features in semiconductor devices and manufacturing method of the same | Chung-Chi Wen, Yen-Ting Chen, Wei-Yang Lee, Chih-Chiang Chang, Chien-I Kuo | 2025-08-26 |
| 12396220 | Isolation structures in multi-gate field-effect transistors | Ting-Yeh Chen, Wei-Yang Lee | 2025-08-19 |
| 12382660 | Structure and formation method of semiconductor device with embedded epitaxial structure | Ting-Yeh Chen, Wei-Yang Lee | 2025-08-05 |
| 12382703 | Spacer features for nanosheet-based devices | I-Hsieh Wong, Alex Lee, Wei-Han Fan, Tzu-Hua Chiu, Wei-Yang Lee | 2025-08-05 |
| 12369334 | Method of manufacturing a semiconductor device and a semiconductor device | Ting-Yeh Chen, Wei-Yang Lee, Yuan-Ching Peng | 2025-07-22 |
| 12369383 | Semiconductor structure with gate-all-around devices and stacked FinFET devices | Feng-Ching Chu, Wei-Yang Lee | 2025-07-22 |
| 12363950 | Nano-FET semiconductor device and method of forming | I-Hsieh Wong, Wei-Yang Lee | 2025-07-15 |
| 12363988 | Inner spacer features for multi-gate transistors | Wei-Han Fan, Wei-Yang Lee, Tzu-Hua Chiu, Kuan-Hao Cheng, Po-Shao Lin | 2025-07-15 |
| 12363989 | Semiconductor device with leakage current suppression and method for forming the same | Bo-Yu Lai, Jyun-Chih Lin, Yen-Ting Chen, Wei-Yang Lee, Wei Hao Lu +1 more | 2025-07-15 |
| 12356662 | Asymmetric source/drain for backside source contact | Feng-Ching Chu, Wei-Yang Lee | 2025-07-08 |
| 12317552 | Semiconductor device structure and method for forming the same | Chien-Wei Lee, Yen-Ting Chen, Wei-Yang Lee | 2025-05-27 |
| 12308287 | Integrated circuit structure with backside dielectric layer having air gap | Che-Lun Chang, Wei-Yang Lee, Yuan-Ching Peng | 2025-05-20 |
| 12310057 | Semiconductor devices including backside vias and methods of forming the same | Che-Lun Chang, Wei-Yang Lee, Yuan-Ching Peng | 2025-05-20 |
| 12302615 | Epitaxial structures exposed in airgaps for semiconductor devices | Po-Yu Lin, Wei-Yang Lee, Tzu-Hua Chiu, Kuan-Hao Cheng, Wei-Han Fan +2 more | 2025-05-13 |
| 12279451 | Semiconductor device including source/drain feature with multiple epitaxial layers | Feng-Ching Chu, Chung-Chi Wen | 2025-04-15 |
| 12278145 | Semiconductor devices with a source/drain barrier layer and methods of manufacture | Chien-Wei Lee, Chii-Horng Li, Bang-Ting Yan, Bo-Yu Lai, Wei-Yang Lee | 2025-04-15 |
| 12272729 | Asymmetric source/drain for backside source contact | Feng-Ching Chu, Wei-Yang Lee | 2025-04-08 |
| 12268023 | Devices with improved operational current and reduced leakage current | Po-Yu Lin, Tzu-Hua Chiu, Wei-Yang Lee, Yuan-Ching Peng | 2025-04-01 |
| 12237232 | Methods for forming source/drain features | I-Hsieh Wong, Wei-Yang Lee, Yuan-Ching Peng | 2025-02-25 |
| 12237230 | Semiconductor device with leakage current suppression and method for forming the same | Bo-Yu Lai, Jyun-Chih Lin, Yen-Ting Chen, Wei-Yang Lee, Wei Hao Lu +1 more | 2025-02-25 |
| 12237390 | Low resistance contact feature | Szu-Wei Tseng, Wei-Yuan Lu, Wei-Yang Lee, Tzu-Wei Kao | 2025-02-25 |