Issued Patents 2025
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12426297 | Method and structure for air gap inner spacer in gate-all-around devices | Shih-Chiang Chen, Wei-Yang Lee, Chia-Pin Lin | 2025-09-23 |
| 12426347 | Multi-gate transistor channel height adjustment | Pei-Ling Kao, You-Ting Lin, Chih-Chung Chang, Jiun-Ming Kuo | 2025-09-23 |
| 12369334 | Method of manufacturing a semiconductor device and a semiconductor device | Ting-Yeh Chen, Wei-Yang Lee, Chia-Pin Lin | 2025-07-22 |
| 12349381 | Dielectric isolation structure for multi-gate transistors | Jen-Hong Chang, Chung-Ting Ko, Kuo-Yi Chao, Chia-Cheng Chao, You-Ting Lin +4 more | 2025-07-01 |
| 12308287 | Integrated circuit structure with backside dielectric layer having air gap | Che-Lun Chang, Wei-Yang Lee, Chia-Pin Lin | 2025-05-20 |
| 12310057 | Semiconductor devices including backside vias and methods of forming the same | Che-Lun Chang, Wei-Yang Lee, Chia-Pin Lin | 2025-05-20 |
| 12268023 | Devices with improved operational current and reduced leakage current | Po-Yu Lin, Tzu-Hua Chiu, Wei-Yang Lee, Chia-Pin Lin | 2025-04-01 |
| 12255102 | Methods of forming of inner spacer structure using semiconductor material with variable germanium concentration | Che-Lun Chang, Jiun-Ming Kuo, Ji-Yin Tsai | 2025-03-18 |
| 12249539 | Multigate device structure with engineered cladding and method making the same | Shu-Wen Shen, Jiun-Ming Kuo, Ji-Xuan YANG, Jheng-Wei LIN, Chien-Hung Chen | 2025-03-11 |
| 12237232 | Methods for forming source/drain features | I-Hsieh Wong, Wei-Yang Lee, Chia-Pin Lin | 2025-02-25 |
| 12230712 | Dielectric fin structure | Yu-Shan Lu, Chung-I Yang, Kuo-Yi Chao, Wen-Hsing Hsieh, Jiun-Ming Kuo +1 more | 2025-02-18 |
| 12205907 | Seal ring structures | Yu-Bey Wu, Yen Lian Lai, Yung Feng Chang, Jiun-Ming Kuo | 2025-01-21 |
| 12206004 | Gate all around device and method of forming the same | Hung-Ju Chou, Yen-Po Lin, Jiun-Ming Kuo | 2025-01-21 |
| 12191370 | Semiconductor device with tunable channel layer usage and methods of fabrication thereof | Bo-Yu Lai, Wei-Yang Lee, Ming-Lung Cheng, Chia-Pin Lin | 2025-01-07 |