Issued Patents 2024
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12176266 | Through-substrate via formation to enlarge electrochemical plating window | Hung-Ling Shih, Jiech-Fun Lu | 2024-12-24 |
| 12170284 | Semiconductor on insulator having a semiconductor layer with different thicknesses | — | 2024-12-17 |
| 12159886 | Unequal CMOS image sensor pixel size to boost quantum efficiency | Hung-Shu Huang | 2024-12-03 |
| 12159870 | Semiconductor structure and forming method thereof | Hung-Shu Huang, Jhih-Bin Chen, Yu-Chang Jong, Chien-Chih Chou, Jhu-Min Song +3 more | 2024-12-03 |
| 12127421 | Formation of a two-layer via structure to mitigate damage to a display device | Yung-Chang Chang | 2024-10-22 |
| 12094989 | Dielectric sidewall structure for quality improvement in Ge and SiGe devices | Chih-Ming Chen, Lee-Chuan Tseng, Po-Chun Liu | 2024-09-17 |
| 12068313 | Semiconductor arrangement and formation thereof | Harry-Hak-Lay Chuang, Wei-Cheng Wu, Shih-Chang Liu | 2024-08-20 |
| 12062727 | Image sensor with absorption enhancement structure | — | 2024-08-13 |
| 12057418 | Passivation structure with increased thickness for metal pads | Hung-Shu Huang | 2024-08-06 |
| 12046477 | By-site-compensated etch back for local planarization/topography adjustment | Hung-Wen Hsu, Min-Yung Ko | 2024-07-23 |
| 12022651 | Flash memory structure with enhanced floating gate | Hung-Shu Huang | 2024-06-25 |
| 12014966 | Semiconductor memory device having composite dielectric film structure and methods of forming the same | Sheng-Chieh Chen, Wei-Ming Wang, Ming-Lun Lee, Chih-Ren Hsieh | 2024-06-18 |
| 11990433 | Bond pad structure coupled to multiple interconnect conductive\ structures through trench in substrate | — | 2024-05-21 |
| 11980046 | Method for forming an isolation structure having multiple thicknesses to mitigate damage to a display device | Yung-Chang Chang | 2024-05-07 |
| 11948969 | Semiconductor structure and method of manufacturing the same | Chun-Tsung Kuo | 2024-04-02 |
| 11908891 | High voltage device with gate extensions | Jhih-Bin Chen | 2024-02-20 |
| 11869988 | Double-sided stacked DTC structure | — | 2024-01-09 |