Issued Patents 2024
Showing 51–65 of 65 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11968840 | Tri-gate transistor and methods for forming the same | Yong-Jie Wu, Yen-Chung Ho, Hui-Hsien Wei, Chia-Jung Yu, Pin-Cheng Hsu +1 more | 2024-04-23 |
| 11935894 | Integrated circuit device with improved layout | Fong-Yuan Chang, Chun-Chen Chen, Po-Hsiang Huang, Lee-Chung Lu, Jerry Chang Jui Kao +2 more | 2024-03-19 |
| 11937426 | Memory device and manufacturing method thereof | Feng-Ching Chu, Feng-Cheng Yang, Katherine H. Chiang, Chieh-Fang Chen | 2024-03-19 |
| 11935966 | Transistor device having ultraviolet attenuating capability | Katherine H. Chiang, Neil Quinn Murray, Ming-Yen Chuang | 2024-03-19 |
| 11935935 | Transistor including a hydrogen-diffusion barrier and methods for forming the same | Min Dai, Wei-Gang Chiu, I-Cheng Chang, Cheng-Yi Wu, Han-Ting Tsai +1 more | 2024-03-19 |
| 11925030 | Method for forming a MFMIS memory device | Sheng-Chih Lai | 2024-03-05 |
| 11916121 | Tri-gate orthogonal channel transistor and methods of forming the same | Katherine H. Chiang | 2024-02-27 |
| 11917831 | Annealed seed layer to improve ferroelectric properties of memory layer | Song-Fu Liao, Rainer Yen-Chieh Huang, Hai-Ching Chen | 2024-02-27 |
| 11915736 | Ferroelectric memory operation bias and power domains | Katherine H. Chiang | 2024-02-27 |
| 11908936 | Double gate ferroelectric field effect transistor devices and methods for forming the same | Yen-Chieh Huang, Song-Fu Liao, Po-Ting Lin, Hai-Ching Chen, Sai-Hooi Yeong +1 more | 2024-02-20 |
| 11910616 | Three-dimensional memory device and method | Meng-Han Lin, Han-Jong Chia, Sheng-Chen Wang, Feng-Cheng Yang, Yu-Ming Lin | 2024-02-20 |
| 11908851 | Semiconductor device having fin structure | Shun Li Chen, Hui-Zhong Zhuang, Pin-Dai Sue, Jung-Chan Yang | 2024-02-20 |
| 11903216 | Three-dimensional memory device and method | Feng-Cheng Yang, Meng-Han Lin, Sheng-Chen Wang, Han-Jong Chia | 2024-02-13 |
| 11903217 | Ferroelectric memory device with a metal layer having a crystal orientation for improving ferroelectric polarization and method for forming the ferroelectric memory device | Yen-Chieh Huang, Hai-Ching Chen | 2024-02-13 |
| 11862726 | Transistor, integrated circuit, and manufacturing method of transistor | Hung-Chang Sun, Sheng-Chih Lai, Yu-Wei Jiang, Kuo-Chang Chiang, TsuChing Yang +1 more | 2024-01-02 |