Issued Patents 2024
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12176435 | Method for forming fin field effect transistor (FinFET) device structure with conductive layer between gate and gate contact | Kuo-Yi Chao, Rueijer Lin, Chen-Yuan Kao, Mei-Yun Wang | 2024-12-24 |
| 12159908 | Semiconductor device and fabrication method thereof | Ming-Hong Chang | 2024-12-03 |
| 12142565 | Different via configurations for different via interface requirements | Shih-Che Lin, Po-Yu Huang, Kuo-Yi Chao, Mei-Yun Wang, Feng-Yu Chang +3 more | 2024-11-12 |
| 12125743 | Via-first process for connecting a contact and a gate electrode | Mei-Yun Wang, Kuo-Yi Chao, Wang-Jung Hsueh | 2024-10-22 |
| 12107166 | Fin field effect transistor (FinFET) device structure with isolation layer and method for forming the same | Chung-Huai CHANG, Kuo-Yi Chao, Mei-Yun Wang | 2024-10-01 |
| 12074063 | Contact formation method and related structure | Shih-Che Lin, Chia-Hsien Yao, Fu-Kai Yang, Mei-Yun Wang | 2024-08-27 |
| 12057392 | Conductive features having varying resistance | Jia-En Lee, Po-Yu Huang, Shih-Che Lin, Kuo-Yi Chao, Mei-Yun Wang +1 more | 2024-08-06 |
| 11978664 | Polishing interconnect structures in semiconductor devices | Pang-Sheng Chang, Kuo-Yi Chao, Fu-Kai Yang, Mei-Yun Wang, Li-Chieh Wu +1 more | 2024-05-07 |
| 11961886 | Semiconductor structure with conductive structure | Jia-Heng Wang, Pang-Chi Wu, Fu-Kai Yang, Mei-Yun Wang | 2024-04-16 |
| 11915971 | Contact formation method and related structure | Wang-Jung Hsueh, Kuo-Yi Chao, Mei-Yun Wang | 2024-02-27 |
| 11901426 | Forming metal contacts on metal gates | Yu-Feng Yin, Kuo-Yi Chao, Mei-Yun Wang, Feng-Yu Chang, Chen-Yuan Kao | 2024-02-13 |