JF

James Fitzpatrick

Micron: 19 patents #27 of 1,553Top 2%
Overall (2024): #2,707 of 561,600Top 1%
19
Patents 2024

Issued Patents 2024

Patent #TitleCo-InventorsDate
12141437 Program command generation with dummy data generation at a memory device Jeremy Binfet, Violante Moschiano, Kishore Kumar Muccherla, Jeffrey S. McNeil, Phong Sy Nguyen 2024-11-12
12131060 Quick charge loss mitigation using two-pass controlled delay Kishore Kumar Muchherla, Dung Viet Nguyen, Dave Scott Ebsen, Tomoharu Tanaka, Huai-Yuan Tseng +2 more 2024-10-29
12105961 Copyback clear command for performing a scan and read in a memory device Jeffrey S. McNeil, Sivagnanam Parthasarathy, Kishore Kumar Muchherla, Patrick R. Khayat, Sead Zildzic +1 more 2024-10-01
12073899 Track charge loss based on signal and noise characteristics of memory cells collected in calibration operations Sivagnanam Parthasarathy, Patrick R. Khayat, AbdelHakim S. Alhussien 2024-08-27
12073892 Simplified operations to read memory cells coarsely programmed via interleaved two-pass data programming techniques Phong Sy Nguyen, Kishore Kumar Muchherla 2024-08-27
12073891 Integrated command to calibrate read voltage level Eric N. Lee, Violante Moschiano, Jeffrey S. McNeil, Sivagnanam Parthasarathy, Kishore Kumar Muchherla +1 more 2024-08-27
12067290 On-die cross-temperature management for a memory device Kishore Kumar Muchherla, Violante Moschiano, Akira Goda, Jeffrey S. McNeil, Jung Sheng Hoei +2 more 2024-08-20
12068034 Two-pass corrective programming for memory cells that store multiple bits and power loss management for two-pass corrective programming Kishore Kumar Muchherla, Huai-Yuan Tseng, Giovanni Maria Paolucci, Dave Scott Ebsen, Akira Goda +5 more 2024-08-20
12046296 Reading of soft bits and hard bits from memory cells Sivagnanam Parthasarathy, Patrick R. Khayat, AbdelHakim S. Alhussien 2024-07-23
12009040 Detection of an incorrectly located read voltage Sivagnanam Parthasarathy, Patrick R. Khayat, AbdelHakim S. Alhussien 2024-06-11
12009034 Classification of error rate of data retrieved from memory cells Sivagnanam Parthasarathy, Patrick R. Khayat, AbdelHakim S. Alhussien 2024-06-11
11990186 One-ladder read of memory cells coarsely programmed via interleaved two-pass data programming techniques Phong Sy Nguyen, Kishore Kumar Muchherla 2024-05-21
11984172 Read disturb mitigation based on signal and noise characteristics of memory cells collected for read calibration Patrick R. Khayat, AbdelHakim S. Alhussien, Sivagnanam Parthasarathy 2024-05-14
11984171 Selective and dynamic deployment of error correction code techniques in integrated circuit memory devices Phong Sy Nguyen, Dung Viet Nguyen, Sivagnanam Parthasarathy 2024-05-14
11983067 Adjustment of code rate as function of memory endurance state metric Kishore Kumar Muchherla, Niccolo′ Righetti, Sivagnanam Parthasarathy, Mustafa N. Kaynak, Mark A. Helm +1 more 2024-05-14
11960722 Memory device programming technique for increased bits per cell Tomoharu Tanaka, Huai-Yuan Tseng, Dung Viet Nguyen, Kishore Kumar Muchherla, Eric N. Lee +2 more 2024-04-16
11934266 Memory compaction management in memory devices Vamsi Pavan Rayaprolu, Mustafa N. Kaynak, Sivagnanam Parthasarathy, Patrick R. Khayat, Sampath K. Ratnam +2 more 2024-03-19
11934686 Data reordering at a memory subsystem Karl D. Schuh, Kishore Kumar Muchherla, Daniel J. Hubbard 2024-03-19
11875846 Optimization of soft bit windows based on signal and noise characteristics of memory cells Sivagnanam Parthasarathy, Patrick R. Khayat, AbdelHakim S. Alhussien 2024-01-16