Issued Patents 2023
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11855177 | Field effect transistors with dual silicide contact structures | Peng-Wei Chu, Ding-Kang Shih, Sung-Li Wang | 2023-12-26 |
| 11823896 | Conductive structure formed by cyclic chemical vapor deposition | Mrunal A. Khaderbad, Keng-Chu Lin, Shuen-Shin Liang, Sung-Li Wang, Yu-Yun Peng | 2023-11-21 |
| 11798945 | Semiconductor structure | Winnie Victoria Wei-Ning Chen, Meng-Hsuan Hsiao, Tung Ying Lee, Pang-Yen Tsai | 2023-10-24 |
| 11756864 | Contact plugs for semiconductor device | Mrunal A. Khaderbad, Sung-Li Wang, Pang-Yen Tsai, Shen-Nan Lee, Teng-Chun Tsai | 2023-09-12 |
| 11749682 | Selective dual silicide formation using a maskless fabrication process flow | Mrunal A. Khaderbad, Pang-Yen Tsai | 2023-09-05 |
| 11742248 | Semiconductor device and manufacturing method thereof | Pei-Wei Lee, Tsung-Yu Hung, Pang-Yen Tsai | 2023-08-29 |
| 11728169 | Semiconductor device | Andrew Joseph Kelly, Yusuke Oniki, Ta-Chun Ma | 2023-08-15 |
| 11728414 | Semiconductor device including a Fin-FET and method of manufacturing the same | Cheng-Yi Peng, Ziwei Fang, I-Ming Chang, Akira Mineji, Yu-Ming Lin +1 more | 2023-08-15 |
| 11715763 | Method of forming metal contact for semiconductor device | Sung-Li Wang, Mrunal A. Khaderbad | 2023-08-01 |
| 11682588 | Epitaxial source/drain and methods of forming same | Cheng-Long Chen, Pang-Yen Tsai | 2023-06-20 |
| 11637108 | Memory array circuit and method of manufacturing same | Hidehiro Fujiwara, Chih-Yu Lin, Hsien-Yu Pan, Yen-Huei Chen, Hung-Jen Liao | 2023-04-25 |
| 11610888 | Semiconductor device having cap layer | Sung-Li Wang, Pang-Yen Tsai | 2023-03-21 |
| 11605633 | Semiconductor device | Winnie Victoria Wei-Ning Chen, Meng-Hsuan Hsiao, Tung Ying Lee, Pang-Yen Tsai | 2023-03-14 |
| 11557484 | Contact structures with deposited silicide layers | Sung-Li Wang, Shih-Chuan Chiu | 2023-01-17 |
| 11545429 | Interconnect structures having lines and vias comprising different conductive materials | Sung-Li Wang | 2023-01-03 |